Improving interface characteristics of Al2O3-based Metal-Insulator-Semiconductor(MIS) diodes using H2O prepulse treatment by atomic layer deposition

Hogyoung Kim; Min Soo Kim; Sung Yeon Ryu; Byung Joon Choi

doi:10.3740/MRSK.2017.27.7.362

Improving interface characteristics of Al₂O₃-based Metal-Insulator-Semiconductor(MIS) diodes using H₂O prepulse treatment by atomic layer deposition

Hogyoung Kim, Min Soo Kim, Sung Yeon Ryu, Byung Joon Choi

Seoul National University of Science and Technology (SNUST)

Research output: Contribution to journal › Article › peer-review

Abstract

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of Au/Al₂O₃/n-Ge metal-insulator-semiconductor (MIS) diodes prepared with and without H₂O prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the Al₂O₃ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the Ge/Al₂O₃ interface.

Original language	English
Pages (from-to)	362-366
Number of pages	5
Journal	Korean Journal of Materials Research
Volume	27
Issue number	7
DOIs	https://doi.org/10.3740/MRSK.2017.27.7.362
State	Published - 1 Jul 2017

Keywords

AlO interlayer
Atomic layer deposition(ALD)
HO prepulse treatment

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10.3740/MRSK.2017.27.7.362

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title = "Improving interface characteristics of Al2O3-based Metal-Insulator-Semiconductor(MIS) diodes using H2O prepulse treatment by atomic layer deposition",

abstract = "We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of Au/Al2O3/n-Ge metal-insulator-semiconductor (MIS) diodes prepared with and without H2O prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the Al2O3 interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the Ge/Al2O3 interface.",

keywords = "AlO interlayer, Atomic layer deposition(ALD), HO prepulse treatment",

author = "Hogyoung Kim and Kim, \{Min Soo\} and Ryu, \{Sung Yeon\} and Choi, \{Byung Joon\}",

note = "Publisher Copyright: {\textcopyright} Materials Research Society of Korea.",

year = "2017",

month = jul,

day = "1",

doi = "10.3740/MRSK.2017.27.7.362",

language = "English",

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pages = "362--366",

journal = "Korean Journal of Materials Research",

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T1 - Improving interface characteristics of Al2O3-based Metal-Insulator-Semiconductor(MIS) diodes using H2O prepulse treatment by atomic layer deposition

AU - Kim, Hogyoung

AU - Kim, Min Soo

AU - Ryu, Sung Yeon

AU - Choi, Byung Joon

N1 - Publisher Copyright: © Materials Research Society of Korea.

PY - 2017/7/1

Y1 - 2017/7/1

N2 - We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of Au/Al2O3/n-Ge metal-insulator-semiconductor (MIS) diodes prepared with and without H2O prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the Al2O3 interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the Ge/Al2O3 interface.

AB - We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of Au/Al2O3/n-Ge metal-insulator-semiconductor (MIS) diodes prepared with and without H2O prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the Al2O3 interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the Ge/Al2O3 interface.

KW - AlO interlayer

KW - Atomic layer deposition(ALD)

KW - HO prepulse treatment

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U2 - 10.3740/MRSK.2017.27.7.362

DO - 10.3740/MRSK.2017.27.7.362

M3 - Article

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SN - 1225-0562

VL - 27

SP - 362

EP - 366

JO - Korean Journal of Materials Research

JF - Korean Journal of Materials Research

IS - 7

ER -

Improving interface characteristics of Al₂O₃-based Metal-Insulator-Semiconductor(MIS) diodes using H₂O prepulse treatment by atomic layer deposition

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Keywords

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