Improving Z-Interference and Program Disturbance in 3D NAND Flash Memory using Asymmetric Program-pass Voltage

In this study, we address both Z-interference and program disturbance in 3D NAND Flash Memory by proposing an innovative asymmetric program-pass voltage technique. Utilizing Technology Computer-Aided Design (TCAD) simulations, our approach applies varying pass voltages to adjacent word lines, effectively reducing Z-interference and program disturbances. This method enhances cell reliability and performance, marking a significant advancement in 3D NAND Flash Memory technology. Our findings emphasize the critical role of program operation conditions in memory design, offering a viable solution to the challenges posed by increased storage density demands.