In-memory computation using positive feedback field effect transistor array based on charge trap layer for Boolean logic

This work presents an in-memory computing architecture based on positive feedback field-effect transistors integrated in a NAND Flash-like array. The proposed system performs complete Boolean logic operations—including XOR and XNOR—directly within the memory array without requiring external circuits. A selective write mechanism combining pre-conditioning with hot carrier injection is introduced to ensure reliable data storage regardless of current flow conditions. The feedback field-effect transistor-based design offers high functional density and scalability, making it a promising candidate for energy-efficient logic-in-memory and neuromorphic computing applications.