Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes

Kyung Min Kim; Byung Joon Choi; Doo Seok Jeong; Cheol Seong Hwang; Seungwu Han

doi:10.1063/1.2361268

Influence of carrier injection on resistive switching of TiO₂ thin films with Pt electrodes

Kyung Min Kim, Byung Joon Choi, Doo Seok Jeong, Cheol Seong Hwang, Seungwu Han

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

The influence of electron injection on the electric-pulse-induced resistive switching of PtTi O2 thin film/Pt structure was studied by current-voltage (I-V) measurements. The electron injection was increased by annealing the sample in a N2 atmosphere or measuring the I-V characteristics at high temperatures (<100 °C). The switching from the high-resistance state (HRS) to the low-resistance state by a filamentary mechanism was suppressed when the carrier injection by Schottky emission or space-charge-limited conduction (SCLC) was excessive. Interfacial potential barrier played a crucial role in determining the carrier injection. Switching was observed (not observed) when the HRS resistance was low (high) although SCLC was observed.

Original language	English
Article number	162912
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2361268
State	Published - 2006

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title = "Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes",

abstract = "The influence of electron injection on the electric-pulse-induced resistive switching of PtTi O2 thin film/Pt structure was studied by current-voltage (I-V) measurements. The electron injection was increased by annealing the sample in a N2 atmosphere or measuring the I-V characteristics at high temperatures (<100 °C). The switching from the high-resistance state (HRS) to the low-resistance state by a filamentary mechanism was suppressed when the carrier injection by Schottky emission or space-charge-limited conduction (SCLC) was excessive. Interfacial potential barrier played a crucial role in determining the carrier injection. Switching was observed (not observed) when the HRS resistance was low (high) although SCLC was observed.",

author = "Kim, \{Kyung Min\} and Choi, \{Byung Joon\} and Jeong, \{Doo Seok\} and Hwang, \{Cheol Seong\} and Seungwu Han",

year = "2006",

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volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes

AU - Kim, Kyung Min

AU - Choi, Byung Joon

AU - Jeong, Doo Seok

AU - Hwang, Cheol Seong

AU - Han, Seungwu

PY - 2006

Y1 - 2006

N2 - The influence of electron injection on the electric-pulse-induced resistive switching of PtTi O2 thin film/Pt structure was studied by current-voltage (I-V) measurements. The electron injection was increased by annealing the sample in a N2 atmosphere or measuring the I-V characteristics at high temperatures (<100 °C). The switching from the high-resistance state (HRS) to the low-resistance state by a filamentary mechanism was suppressed when the carrier injection by Schottky emission or space-charge-limited conduction (SCLC) was excessive. Interfacial potential barrier played a crucial role in determining the carrier injection. Switching was observed (not observed) when the HRS resistance was low (high) although SCLC was observed.

AB - The influence of electron injection on the electric-pulse-induced resistive switching of PtTi O2 thin film/Pt structure was studied by current-voltage (I-V) measurements. The electron injection was increased by annealing the sample in a N2 atmosphere or measuring the I-V characteristics at high temperatures (<100 °C). The switching from the high-resistance state (HRS) to the low-resistance state by a filamentary mechanism was suppressed when the carrier injection by Schottky emission or space-charge-limited conduction (SCLC) was excessive. Interfacial potential barrier played a crucial role in determining the carrier injection. Switching was observed (not observed) when the HRS resistance was low (high) although SCLC was observed.

UR - https://www.scopus.com/pages/publications/33750187879

U2 - 10.1063/1.2361268

DO - 10.1063/1.2361268

M3 - Article

AN - SCOPUS:33750187879

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162912

ER -

Influence of carrier injection on resistive switching of TiO₂ thin films with Pt electrodes

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