Influence of shunt conduction on determining the dominant recombination processes in CIGS thin-film solar cells

Yunae Cho; Eunsongyi Lee; Dong Wook Kim; Sejin Ahn; Guk Yeong Jeong; Jihye Gwak; Jae Ho Yun; Hogyoung Kim

doi:10.1016/j.cap.2012.06.006

Influence of shunt conduction on determining the dominant recombination processes in CIGS thin-film solar cells

Yunae Cho
, Eunsongyi Lee
, Dong Wook Kim
, Sejin Ahn
, Guk Yeong Jeong
, Jihye Gwak
, Jae Ho Yun
, Hogyoung Kim

Dept. of Optometry

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We investigated the transport and photovoltaic properties of Cu(In _1-xGa _x)Se ₂ (CIGS) thin-film solar cells. The shunt-current-eliminated diode current could be obtained from the current-voltage characteristics by subtracting the parasitic shunt leakage current from the total current. The temperature dependence of the open-circuit voltage, extracted from the shunt-eliminated (total) current, suggested that the recombination activation energy is comparable to (much less than) the CIGS bandgap. The low-temperature characteristics of the diode ideality factor supported bulk-dominated recombination in the same cell. This suggests that shunt-current subtraction can provide the proper diode parameters of CIGS solar cells.

Original language	English
Pages (from-to)	37-40
Number of pages	4
Journal	Current Applied Physics
Volume	13
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2012.06.006
State	Published - Jan 2013

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CIGS thin film
Open-circuit voltage
Recombination activation energy
Shunt current
Solar cells

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10.1016/j.cap.2012.06.006

Cite this

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title = "Influence of shunt conduction on determining the dominant recombination processes in CIGS thin-film solar cells",

abstract = "We investigated the transport and photovoltaic properties of Cu(In 1-xGa x)Se 2 (CIGS) thin-film solar cells. The shunt-current-eliminated diode current could be obtained from the current-voltage characteristics by subtracting the parasitic shunt leakage current from the total current. The temperature dependence of the open-circuit voltage, extracted from the shunt-eliminated (total) current, suggested that the recombination activation energy is comparable to (much less than) the CIGS bandgap. The low-temperature characteristics of the diode ideality factor supported bulk-dominated recombination in the same cell. This suggests that shunt-current subtraction can provide the proper diode parameters of CIGS solar cells.",

keywords = "CIGS thin film, Open-circuit voltage, Recombination activation energy, Shunt current, Solar cells",

author = "Yunae Cho and Eunsongyi Lee and Kim, \{Dong Wook\} and Sejin Ahn and Jeong, \{Guk Yeong\} and Jihye Gwak and Yun, \{Jae Ho\} and Hogyoung Kim",

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doi = "10.1016/j.cap.2012.06.006",

language = "English",

volume = "13",

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T1 - Influence of shunt conduction on determining the dominant recombination processes in CIGS thin-film solar cells

AU - Cho, Yunae

AU - Lee, Eunsongyi

AU - Kim, Dong Wook

AU - Ahn, Sejin

AU - Jeong, Guk Yeong

AU - Gwak, Jihye

AU - Yun, Jae Ho

AU - Kim, Hogyoung

PY - 2013/1

Y1 - 2013/1

N2 - We investigated the transport and photovoltaic properties of Cu(In 1-xGa x)Se 2 (CIGS) thin-film solar cells. The shunt-current-eliminated diode current could be obtained from the current-voltage characteristics by subtracting the parasitic shunt leakage current from the total current. The temperature dependence of the open-circuit voltage, extracted from the shunt-eliminated (total) current, suggested that the recombination activation energy is comparable to (much less than) the CIGS bandgap. The low-temperature characteristics of the diode ideality factor supported bulk-dominated recombination in the same cell. This suggests that shunt-current subtraction can provide the proper diode parameters of CIGS solar cells.

AB - We investigated the transport and photovoltaic properties of Cu(In 1-xGa x)Se 2 (CIGS) thin-film solar cells. The shunt-current-eliminated diode current could be obtained from the current-voltage characteristics by subtracting the parasitic shunt leakage current from the total current. The temperature dependence of the open-circuit voltage, extracted from the shunt-eliminated (total) current, suggested that the recombination activation energy is comparable to (much less than) the CIGS bandgap. The low-temperature characteristics of the diode ideality factor supported bulk-dominated recombination in the same cell. This suggests that shunt-current subtraction can provide the proper diode parameters of CIGS solar cells.

KW - CIGS thin film

KW - Open-circuit voltage

KW - Recombination activation energy

KW - Shunt current

KW - Solar cells

UR - https://www.scopus.com/pages/publications/84866126092

U2 - 10.1016/j.cap.2012.06.006

DO - 10.1016/j.cap.2012.06.006

M3 - Article

AN - SCOPUS:84866126092

SN - 1567-1739

VL - 13

SP - 37

EP - 40

JO - Current Applied Physics

JF - Current Applied Physics

IS - 1

ER -

Influence of shunt conduction on determining the dominant recombination processes in CIGS thin-film solar cells

Abstract

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Keywords

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