Influence of the kinetic adsorption process on the atomic layer deposition process of (GeTe2)(1- x)(Sb2Te 3)x layers using Ge4+-alkoxide precursors

Taeyong Eom; Taehong Gwon; Sijung Yoo; Byung Joon Choi; Moo Sung Kim; Iain Buchanan; Manchao Xiao; Cheol Seong Hwang

doi:10.1021/cm4034885

Influence of the kinetic adsorption process on the atomic layer deposition process of (GeTe₂)_{(1- x)}(Sb₂Te ₃)_x layers using Ge⁴⁺-alkoxide precursors

Taeyong Eom, Taehong Gwon, Sijung Yoo, Byung Joon Choi, Moo Sung Kim, Iain Buchanan, Manchao Xiao, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

(GeTe₂)_(1-x)(Sb₂Te₃) _x (GST) layers were deposited via atomic layer deposition (ALD) at growth temperatures ranging from 50 to 120 C using Ge(OCH₃) ₄ or Ge(OC₂H₅)₄, Sb(OC ₂H₅)₃, and [(CH₃) ₃Si]₂Te as the metal-organic precursors of the Ge, Sb, and Te elements, respectively. The GST layers with compositions lying on the GeTe₂-Sb₂Te₃ tie lines could be obtained by varying the ratio of the Ge-Te and Sb-Te ALD cycles. Although the incorporation of an Sb-Te layer into the GST film occurred in a genuine ALD manner, that of the Ge-Te layer was governed by the kinetically limited physisorption of Ge precursors. The incorporation behavior of the Ge precursor with different ligands was explained by the adsorption and desorption kinetics based on the Brunauer-Emmett-Teller isotherm. The ALD-like film growth behavior could be well-explained by the kinetically limited incorporation of Ge atoms.

Original language	English
Pages (from-to)	1583-1591
Number of pages	9
Journal	Chemistry of Materials
Volume	26
Issue number	4
DOIs	https://doi.org/10.1021/cm4034885
State	Published - 25 Feb 2014

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title = "Influence of the kinetic adsorption process on the atomic layer deposition process of (GeTe2)(1- x)(Sb2Te 3)x layers using Ge4+-alkoxide precursors",

abstract = "(GeTe2)(1-x)(Sb2Te3) x (GST) layers were deposited via atomic layer deposition (ALD) at growth temperatures ranging from 50 to 120 C using Ge(OCH3) 4 or Ge(OC2H5)4, Sb(OC 2H5)3, and [(CH3) 3Si]2Te as the metal-organic precursors of the Ge, Sb, and Te elements, respectively. The GST layers with compositions lying on the GeTe2-Sb2Te3 tie lines could be obtained by varying the ratio of the Ge-Te and Sb-Te ALD cycles. Although the incorporation of an Sb-Te layer into the GST film occurred in a genuine ALD manner, that of the Ge-Te layer was governed by the kinetically limited physisorption of Ge precursors. The incorporation behavior of the Ge precursor with different ligands was explained by the adsorption and desorption kinetics based on the Brunauer-Emmett-Teller isotherm. The ALD-like film growth behavior could be well-explained by the kinetically limited incorporation of Ge atoms.",

author = "Taeyong Eom and Taehong Gwon and Sijung Yoo and Choi, \{Byung Joon\} and Kim, \{Moo Sung\} and Iain Buchanan and Manchao Xiao and Hwang, \{Cheol Seong\}",

year = "2014",

month = feb,

day = "25",

doi = "10.1021/cm4034885",

language = "English",

volume = "26",

pages = "1583--1591",

journal = "Chemistry of Materials",

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T1 - Influence of the kinetic adsorption process on the atomic layer deposition process of (GeTe2)(1- x)(Sb2Te 3)x layers using Ge4+-alkoxide precursors

AU - Eom, Taeyong

AU - Gwon, Taehong

AU - Yoo, Sijung

AU - Choi, Byung Joon

AU - Kim, Moo Sung

AU - Buchanan, Iain

AU - Xiao, Manchao

AU - Hwang, Cheol Seong

PY - 2014/2/25

Y1 - 2014/2/25

N2 - (GeTe2)(1-x)(Sb2Te3) x (GST) layers were deposited via atomic layer deposition (ALD) at growth temperatures ranging from 50 to 120 C using Ge(OCH3) 4 or Ge(OC2H5)4, Sb(OC 2H5)3, and [(CH3) 3Si]2Te as the metal-organic precursors of the Ge, Sb, and Te elements, respectively. The GST layers with compositions lying on the GeTe2-Sb2Te3 tie lines could be obtained by varying the ratio of the Ge-Te and Sb-Te ALD cycles. Although the incorporation of an Sb-Te layer into the GST film occurred in a genuine ALD manner, that of the Ge-Te layer was governed by the kinetically limited physisorption of Ge precursors. The incorporation behavior of the Ge precursor with different ligands was explained by the adsorption and desorption kinetics based on the Brunauer-Emmett-Teller isotherm. The ALD-like film growth behavior could be well-explained by the kinetically limited incorporation of Ge atoms.

AB - (GeTe2)(1-x)(Sb2Te3) x (GST) layers were deposited via atomic layer deposition (ALD) at growth temperatures ranging from 50 to 120 C using Ge(OCH3) 4 or Ge(OC2H5)4, Sb(OC 2H5)3, and [(CH3) 3Si]2Te as the metal-organic precursors of the Ge, Sb, and Te elements, respectively. The GST layers with compositions lying on the GeTe2-Sb2Te3 tie lines could be obtained by varying the ratio of the Ge-Te and Sb-Te ALD cycles. Although the incorporation of an Sb-Te layer into the GST film occurred in a genuine ALD manner, that of the Ge-Te layer was governed by the kinetically limited physisorption of Ge precursors. The incorporation behavior of the Ge precursor with different ligands was explained by the adsorption and desorption kinetics based on the Brunauer-Emmett-Teller isotherm. The ALD-like film growth behavior could be well-explained by the kinetically limited incorporation of Ge atoms.

UR - https://www.scopus.com/pages/publications/84894659027

U2 - 10.1021/cm4034885

DO - 10.1021/cm4034885

M3 - Article

AN - SCOPUS:84894659027

SN - 0897-4756

VL - 26

SP - 1583

EP - 1591

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 4

ER -

Influence of the kinetic adsorption process on the atomic layer deposition process of (GeTe₂)_{(1- x)}(Sb₂Te ₃)_x layers using Ge⁴⁺-alkoxide precursors

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