Integrate-and-fire neuron circuit and synaptic device using floating body MOSFET with spike timing- dependent plasticity

Min Woo Kwon, Hyungjin Kim, Jungjin Park, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In the previous work, we have proposed an integrate-and-fire neuron circuit and synaptic device based on the floating body MOSFET [1-3]. Integrateand- Fire(I&F) neuron circuit emulates the biological neuron characteristics such as integration, threshold triggering, output generation, refractory period using floating body MOSFET. The synaptic device has short-term and long-term memory in a single silicon device. In this paper, we connect the neuron circuit and the synaptic device using current mirror circuit for summation of post synaptic pulses. We emulate spike-timing-dependent-plasticity (STDP) characteristics of the synapse using feedback voltage without controller or clock. Using memory device in the logic circuit, we can emulate biological synapse and neuron with a small number of devices.

Original languageEnglish
Pages (from-to)658-663
Number of pages6
JournalJournal of Semiconductor Technology and Science
Volume15
Issue number6
DOIs
StatePublished - Dec 2015

Keywords

  • Floating body MOSFET
  • Integrate-and-fire neuron circuit
  • Long and short-term memory
  • Spike-timing-dependent-plasticity
  • Synaptic transistor

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