TY - JOUR
T1 - Integrate-and-fire neuron circuit and synaptic device using floating body MOSFET with spike timing- dependent plasticity
AU - Kwon, Min Woo
AU - Kim, Hyungjin
AU - Park, Jungjin
AU - Park, Byung Gook
N1 - Publisher Copyright:
© 2015, Institute of Electronics Engineers of Korea. All rights reserved.
PY - 2015/12
Y1 - 2015/12
N2 - In the previous work, we have proposed an integrate-and-fire neuron circuit and synaptic device based on the floating body MOSFET [1-3]. Integrateand- Fire(I&F) neuron circuit emulates the biological neuron characteristics such as integration, threshold triggering, output generation, refractory period using floating body MOSFET. The synaptic device has short-term and long-term memory in a single silicon device. In this paper, we connect the neuron circuit and the synaptic device using current mirror circuit for summation of post synaptic pulses. We emulate spike-timing-dependent-plasticity (STDP) characteristics of the synapse using feedback voltage without controller or clock. Using memory device in the logic circuit, we can emulate biological synapse and neuron with a small number of devices.
AB - In the previous work, we have proposed an integrate-and-fire neuron circuit and synaptic device based on the floating body MOSFET [1-3]. Integrateand- Fire(I&F) neuron circuit emulates the biological neuron characteristics such as integration, threshold triggering, output generation, refractory period using floating body MOSFET. The synaptic device has short-term and long-term memory in a single silicon device. In this paper, we connect the neuron circuit and the synaptic device using current mirror circuit for summation of post synaptic pulses. We emulate spike-timing-dependent-plasticity (STDP) characteristics of the synapse using feedback voltage without controller or clock. Using memory device in the logic circuit, we can emulate biological synapse and neuron with a small number of devices.
KW - Floating body MOSFET
KW - Integrate-and-fire neuron circuit
KW - Long and short-term memory
KW - Spike-timing-dependent-plasticity
KW - Synaptic transistor
UR - https://www.scopus.com/pages/publications/84951077948
U2 - 10.5573/JSTS.2015.15.6.658
DO - 10.5573/JSTS.2015.15.6.658
M3 - Article
AN - SCOPUS:84951077948
SN - 1598-1657
VL - 15
SP - 658
EP - 663
JO - Journal of Semiconductor Technology and Science
JF - Journal of Semiconductor Technology and Science
IS - 6
ER -