Integrate-and-fire neuron circuit and synaptic device with a floating body MOSFET

Min Woo Kwon; Hyungjin Kim; Jungjin Park; Rajeev Ranjan; Jong Ho Lee; Byung Gook Park

doi:10.1109/SNW.2014.7348564

Integrate-and-fire neuron circuit and synaptic device with a floating body MOSFET

Min Woo Kwon, Hyungjin Kim, Jungjin Park, Rajeev Ranjan, Jong Ho Lee, Byung Gook Park

Electronic Engineering Program

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We propose an integrate-and-fire neuron circuit and synaptic device with the floating body MOSFETs. The synaptic devices consist of a floating body MOSFET for biological synaptic characteristics. The synaptic learning is performed by hole accumulation. The synaptic device has short-term and long-term memory in a single silicon device [1]. I&F neuron circuit emulate the biological neuron characteristics such as integration, threshold triggering, output generation, and refractory period using floating body MOSFET [2]. The neuron circuit and the synaptic device are connected using current mirror circuit for summation of post synaptic pulses.

Original language	English
Title of host publication	2014 Silicon Nanoelectronics Workshop, SNW 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479956777
DOIs	https://doi.org/10.1109/SNW.2014.7348564
State	Published - 4 Dec 2015
Event	Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: 8 Jun 2014 → 9 Jun 2014

Publication series

Name	2014 Silicon Nanoelectronics Workshop, SNW 2014

Conference

Conference	Silicon Nanoelectronics Workshop, SNW 2014
Country/Territory	United States
City	Honolulu
Period	8/06/14 → 9/06/14

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10.1109/SNW.2014.7348564

Cite this

Kwon, M. W., Kim, H., Park, J., Ranjan, R., Lee, J. H., & Park, B. G. (2015). Integrate-and-fire neuron circuit and synaptic device with a floating body MOSFET. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 Article 7348564 (2014 Silicon Nanoelectronics Workshop, SNW 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348564

@inproceedings{c98ee18d3d1741fda149eaaa7694b20a,

title = "Integrate-and-fire neuron circuit and synaptic device with a floating body MOSFET",

abstract = "We propose an integrate-and-fire neuron circuit and synaptic device with the floating body MOSFETs. The synaptic devices consist of a floating body MOSFET for biological synaptic characteristics. The synaptic learning is performed by hole accumulation. The synaptic device has short-term and long-term memory in a single silicon device [1]. I\&F neuron circuit emulate the biological neuron characteristics such as integration, threshold triggering, output generation, and refractory period using floating body MOSFET [2]. The neuron circuit and the synaptic device are connected using current mirror circuit for summation of post synaptic pulses.",

author = "Kwon, \{Min Woo\} and Hyungjin Kim and Jungjin Park and Rajeev Ranjan and Lee, \{Jong Ho\} and Park, \{Byung Gook\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; Silicon Nanoelectronics Workshop, SNW 2014 ; Conference date: 08-06-2014 Through 09-06-2014",

year = "2015",

month = dec,

day = "4",

doi = "10.1109/SNW.2014.7348564",

language = "English",

series = "2014 Silicon Nanoelectronics Workshop, SNW 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Kwon, MW, Kim, H, Park, J, Ranjan, R, Lee, JH & Park, BG 2015, Integrate-and-fire neuron circuit and synaptic device with a floating body MOSFET. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348564, 2014 Silicon Nanoelectronics Workshop, SNW 2014, Institute of Electrical and Electronics Engineers Inc., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 8/06/14. https://doi.org/10.1109/SNW.2014.7348564

Integrate-and-fire neuron circuit and synaptic device with a floating body MOSFET. / Kwon, Min Woo; Kim, Hyungjin; Park, Jungjin et al.
2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7348564 (2014 Silicon Nanoelectronics Workshop, SNW 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Integrate-and-fire neuron circuit and synaptic device with a floating body MOSFET

AU - Kwon, Min Woo

AU - Kim, Hyungjin

AU - Park, Jungjin

AU - Ranjan, Rajeev

AU - Lee, Jong Ho

AU - Park, Byung Gook

PY - 2015/12/4

Y1 - 2015/12/4

N2 - We propose an integrate-and-fire neuron circuit and synaptic device with the floating body MOSFETs. The synaptic devices consist of a floating body MOSFET for biological synaptic characteristics. The synaptic learning is performed by hole accumulation. The synaptic device has short-term and long-term memory in a single silicon device [1]. I&F neuron circuit emulate the biological neuron characteristics such as integration, threshold triggering, output generation, and refractory period using floating body MOSFET [2]. The neuron circuit and the synaptic device are connected using current mirror circuit for summation of post synaptic pulses.

AB - We propose an integrate-and-fire neuron circuit and synaptic device with the floating body MOSFETs. The synaptic devices consist of a floating body MOSFET for biological synaptic characteristics. The synaptic learning is performed by hole accumulation. The synaptic device has short-term and long-term memory in a single silicon device [1]. I&F neuron circuit emulate the biological neuron characteristics such as integration, threshold triggering, output generation, and refractory period using floating body MOSFET [2]. The neuron circuit and the synaptic device are connected using current mirror circuit for summation of post synaptic pulses.

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U2 - 10.1109/SNW.2014.7348564

DO - 10.1109/SNW.2014.7348564

M3 - Conference contribution

AN - SCOPUS:84963788177

T3 - 2014 Silicon Nanoelectronics Workshop, SNW 2014

BT - 2014 Silicon Nanoelectronics Workshop, SNW 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Silicon Nanoelectronics Workshop, SNW 2014

Y2 - 8 June 2014 through 9 June 2014

ER -

Integrate-and-fire neuron circuit and synaptic device with a floating body MOSFET

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