TY - JOUR
T1 - Integrate-and-fire neuron circuit and synaptic device with floating body MOSFETs
AU - Kwon, Min Woo
AU - Kim, Hyungjin
AU - Park, Jungjin
AU - Park, Byung Gook
N1 - Publisher Copyright:
© 2014, Institute of Electronics Engineers of Korea. All rights reserved.
PY - 2014/12/1
Y1 - 2014/12/1
N2 - We propose an integrate-and-fire neuron circuit and synaptic devices with the floating body MOSFETs. The synaptic devices consist of a floating body MOSFET to imitate biological synaptic characteristics. The synaptic learning is performed by hole accumulation. The synaptic device has short-term and long-term memory in a single silicon device. I&F neuron circuit emulate the biological neuron characteristics such as integration, threshold triggering, output generation, and refractory period, using floating body MOSFET. The neuron circuit sends feedback signal to the synaptic transistor for long-term memory.
AB - We propose an integrate-and-fire neuron circuit and synaptic devices with the floating body MOSFETs. The synaptic devices consist of a floating body MOSFET to imitate biological synaptic characteristics. The synaptic learning is performed by hole accumulation. The synaptic device has short-term and long-term memory in a single silicon device. I&F neuron circuit emulate the biological neuron characteristics such as integration, threshold triggering, output generation, and refractory period, using floating body MOSFET. The neuron circuit sends feedback signal to the synaptic transistor for long-term memory.
KW - Floating body MOSFET
KW - Integrate-and-fire neuron circuit
KW - Long and short-term memory
KW - Synaptic transistor
UR - http://www.scopus.com/inward/record.url?scp=84920278815&partnerID=8YFLogxK
U2 - 10.5573/JSTS.2014.14.6.755
DO - 10.5573/JSTS.2014.14.6.755
M3 - Article
AN - SCOPUS:84920278815
SN - 1598-1657
VL - 14
SP - 755
EP - 759
JO - Journal of Semiconductor Technology and Science
JF - Journal of Semiconductor Technology and Science
IS - 6
ER -