Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Fingerprint

Dive into the research topics of 'Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics'. Together they form a unique fingerprint.
Sort by

Material Science

Physics