Interfacial characteristics of Au/Al2O3/InP metal-insulator-semiconductor diodes

Hogyoung Kim; Yong Kim; Byung Joon Choi

doi:10.1063/1.5047538

Interfacial characteristics of Au/Al₂O₃/InP metal-insulator-semiconductor diodes

Seoul National University of Science and Technology (SNUST)

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9 Scopus citations

Abstract

The interfacial properties of Au/n-InP contacts with a thin layer of Al₂O₃ (0.7 or 2.7 nm) deposited by atomic layer deposition (ALD) were investigated using temperature-dependent current-voltage (I-V-T) and depth-resolved X-ray photoelectron spectroscopy (XPS) measurements. Schottky barrier inhomogeneity provided a good description of the charge transport at the interface of all the samples. Based on XPS analysis, the removal of native oxide occurred due to a self-cleaning effect via the ALD process, especially for the thicker Al₂O₃ layer. The significant diffusion of In into the Al₂O₃ of the thinner layer may have formed In₂O₃ and degraded the Al₂O₃ film. XPS analysis also showed that with increasing Al₂O₃ thickness, emission from In₂O₃ decreased while that from InPO₄ increased.

Original language	English
Article number	095022
Journal	AIP Advances
Volume	8
Issue number	9
DOIs	https://doi.org/10.1063/1.5047538
State	Published - 1 Sep 2018

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title = "Interfacial characteristics of Au/Al2O3/InP metal-insulator-semiconductor diodes",

abstract = "The interfacial properties of Au/n-InP contacts with a thin layer of Al2O3 (0.7 or 2.7 nm) deposited by atomic layer deposition (ALD) were investigated using temperature-dependent current-voltage (I-V-T) and depth-resolved X-ray photoelectron spectroscopy (XPS) measurements. Schottky barrier inhomogeneity provided a good description of the charge transport at the interface of all the samples. Based on XPS analysis, the removal of native oxide occurred due to a self-cleaning effect via the ALD process, especially for the thicker Al2O3 layer. The significant diffusion of In into the Al2O3 of the thinner layer may have formed In2O3 and degraded the Al2O3 film. XPS analysis also showed that with increasing Al2O3 thickness, emission from In2O3 decreased while that from InPO4 increased.",

author = "Hogyoung Kim and Yong Kim and Choi, \{Byung Joon\}",

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AU - Kim, Hogyoung

AU - Kim, Yong

AU - Choi, Byung Joon

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Y1 - 2018/9/1

N2 - The interfacial properties of Au/n-InP contacts with a thin layer of Al2O3 (0.7 or 2.7 nm) deposited by atomic layer deposition (ALD) were investigated using temperature-dependent current-voltage (I-V-T) and depth-resolved X-ray photoelectron spectroscopy (XPS) measurements. Schottky barrier inhomogeneity provided a good description of the charge transport at the interface of all the samples. Based on XPS analysis, the removal of native oxide occurred due to a self-cleaning effect via the ALD process, especially for the thicker Al2O3 layer. The significant diffusion of In into the Al2O3 of the thinner layer may have formed In2O3 and degraded the Al2O3 film. XPS analysis also showed that with increasing Al2O3 thickness, emission from In2O3 decreased while that from InPO4 increased.

AB - The interfacial properties of Au/n-InP contacts with a thin layer of Al2O3 (0.7 or 2.7 nm) deposited by atomic layer deposition (ALD) were investigated using temperature-dependent current-voltage (I-V-T) and depth-resolved X-ray photoelectron spectroscopy (XPS) measurements. Schottky barrier inhomogeneity provided a good description of the charge transport at the interface of all the samples. Based on XPS analysis, the removal of native oxide occurred due to a self-cleaning effect via the ALD process, especially for the thicker Al2O3 layer. The significant diffusion of In into the Al2O3 of the thinner layer may have formed In2O3 and degraded the Al2O3 film. XPS analysis also showed that with increasing Al2O3 thickness, emission from In2O3 decreased while that from InPO4 increased.

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U2 - 10.1063/1.5047538

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ER -

Interfacial characteristics of Au/Al₂O₃/InP metal-insulator-semiconductor diodes

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