Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

Hogyoung Kim; Keun Man Song

doi:10.1016/j.jlumin.2013.08.034

Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

Hogyoung Kim, Keun Man Song

Dept. of Optometry

Korea Advanced Nano Fab Center

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp ₂Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor-acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples.

Original language	English
Pages (from-to)	631-634
Number of pages	4
Journal	Journal of Luminescence
Volume	145
DOIs	https://doi.org/10.1016/j.jlumin.2013.08.034
State	Published - 2014

Keywords

a-plane GaN
Blue luminescence
Donor-acceptor pair
Mg doping
Potential fluctuations

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10.1016/j.jlumin.2013.08.034

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title = "Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN",

abstract = "The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp 2Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor-acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples.",

keywords = "a-plane GaN, Blue luminescence, Donor-acceptor pair, Mg doping, Potential fluctuations",

author = "Hogyoung Kim and Song, \{Keun Man\}",

year = "2014",

doi = "10.1016/j.jlumin.2013.08.034",

language = "English",

volume = "145",

pages = "631--634",

journal = "Journal of Luminescence",

issn = "0022-2313",

}

TY - JOUR

T1 - Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

AU - Kim, Hogyoung

AU - Song, Keun Man

PY - 2014

Y1 - 2014

N2 - The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp 2Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor-acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples.

AB - The temperature-dependent optical characteristics of blue luminescence (BL) band in Mg-doped nonpolar a-plane GaN films were investigated using photoluminescence (PL) measurements. For the sample with the highest Cp 2Mg/TMGa ([Mg]/[Ga]) molar ratio, the BL band was shown to have two distinct peaks, one at about 2.95 eV and the other at about 2.75 eV, which were associated with the donor-acceptor pair (DAP) transitions between the one shallow Mg acceptor level and the two different deep donor levels. In contrast, a single broad BL band was observed for all other samples. Strong potential fluctuations caused by high compensation level in the sample with the highest [Mg]/[Ga] molar ratio might localize the carriers related to the 2.75 eV band, leading to the different emission characteristics in BL band as compared to other samples.

KW - a-plane GaN

KW - Blue luminescence

KW - Donor-acceptor pair

KW - Mg doping

KW - Potential fluctuations

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U2 - 10.1016/j.jlumin.2013.08.034

DO - 10.1016/j.jlumin.2013.08.034

M3 - Article

AN - SCOPUS:84884176983

SN - 0022-2313

VL - 145

SP - 631

EP - 634

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Investigation of blue luminescence in Mg-doped nonpolar a-plane GaN

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