Investigation of the Thermal Recovery from Reset Breakdown of a SiNx-Based RRAM

Kyungho Hong; Kyung Kyu Min; Min Hwi Kim; Suhyun Bang; Tae Hyeon Kim; Dong Keun Lee; Yeon Joon Choi; Chae Soo Kim; Jae Yoon Lee; Sungjun Kim; Seongjae Cho; Byung Gook Park

doi:10.1109/TED.2020.2976106

Investigation of the Thermal Recovery from Reset Breakdown of a SiN_x-Based RRAM

Kyungho Hong, Kyung Kyu Min, Min Hwi Kim, Suhyun Bang, Tae Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, Jae Yoon Lee, Sungjun Kim, Seongjae Cho, Byung Gook Park

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this article, we report a method for recovering a resistive-switching random access memory (RRAM) from the reset breakdown and enhancing the endurance characteristics. A SiN_x-based RRAM device has been fabricated and its switching characteristics are analyzed with a particular interest in reset breakdown. It has been found that the SiN_x RRAM in permanent reset breakdown can be revived to high-resistance state (HRS) by thermal recovery, a low-temperature annealing method. The memory window could be widened even with enhanced reset stability and conductance distribution. Temperature-dependent conductance change has been measured in order to figure out the substantial component of conductive filament and the mechanism of thermal recovery. The experimental evidences show that the reset breakdown process is the result of unwanted Si dangling bond (Si-DB) formation. By thermal recovery, Ni filament could be ruptured without applying a high electric field which induces negative set.

Original language	English
Article number	9031742
Pages (from-to)	1600-1605
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	4
DOIs	https://doi.org/10.1109/TED.2020.2976106
State	Published - 1 Apr 2020

Keywords

Negative set
Reset breakdown
Resistiveswitching random access memory (RRAM)
Si-rich nitride (SiN)
Thermal recovery

Access to Document

10.1109/TED.2020.2976106

Cite this

@article{4a0cc43a277c46cebb77615bd2ea8000,

title = "Investigation of the Thermal Recovery from Reset Breakdown of a SiNx-Based RRAM",

abstract = "In this article, we report a method for recovering a resistive-switching random access memory (RRAM) from the reset breakdown and enhancing the endurance characteristics. A SiNx-based RRAM device has been fabricated and its switching characteristics are analyzed with a particular interest in reset breakdown. It has been found that the SiNx RRAM in permanent reset breakdown can be revived to high-resistance state (HRS) by thermal recovery, a low-temperature annealing method. The memory window could be widened even with enhanced reset stability and conductance distribution. Temperature-dependent conductance change has been measured in order to figure out the substantial component of conductive filament and the mechanism of thermal recovery. The experimental evidences show that the reset breakdown process is the result of unwanted Si dangling bond (Si-DB) formation. By thermal recovery, Ni filament could be ruptured without applying a high electric field which induces negative set.",

keywords = "Negative set, Reset breakdown, Resistiveswitching random access memory (RRAM), Si-rich nitride (SiN), Thermal recovery",

author = "Kyungho Hong and Min, \{Kyung Kyu\} and Kim, \{Min Hwi\} and Suhyun Bang and Kim, \{Tae Hyeon\} and Lee, \{Dong Keun\} and Choi, \{Yeon Joon\} and Kim, \{Chae Soo\} and Lee, \{Jae Yoon\} and Sungjun Kim and Seongjae Cho and Park, \{Byung Gook\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2020",

month = apr,

day = "1",

doi = "10.1109/TED.2020.2976106",

language = "English",

volume = "67",

pages = "1600--1605",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

number = "4",

}

TY - JOUR

T1 - Investigation of the Thermal Recovery from Reset Breakdown of a SiNx-Based RRAM

AU - Hong, Kyungho

AU - Min, Kyung Kyu

AU - Kim, Min Hwi

AU - Bang, Suhyun

AU - Kim, Tae Hyeon

AU - Lee, Dong Keun

AU - Choi, Yeon Joon

AU - Kim, Chae Soo

AU - Lee, Jae Yoon

AU - Kim, Sungjun

AU - Cho, Seongjae

AU - Park, Byung Gook

PY - 2020/4/1

Y1 - 2020/4/1

N2 - In this article, we report a method for recovering a resistive-switching random access memory (RRAM) from the reset breakdown and enhancing the endurance characteristics. A SiNx-based RRAM device has been fabricated and its switching characteristics are analyzed with a particular interest in reset breakdown. It has been found that the SiNx RRAM in permanent reset breakdown can be revived to high-resistance state (HRS) by thermal recovery, a low-temperature annealing method. The memory window could be widened even with enhanced reset stability and conductance distribution. Temperature-dependent conductance change has been measured in order to figure out the substantial component of conductive filament and the mechanism of thermal recovery. The experimental evidences show that the reset breakdown process is the result of unwanted Si dangling bond (Si-DB) formation. By thermal recovery, Ni filament could be ruptured without applying a high electric field which induces negative set.

AB - In this article, we report a method for recovering a resistive-switching random access memory (RRAM) from the reset breakdown and enhancing the endurance characteristics. A SiNx-based RRAM device has been fabricated and its switching characteristics are analyzed with a particular interest in reset breakdown. It has been found that the SiNx RRAM in permanent reset breakdown can be revived to high-resistance state (HRS) by thermal recovery, a low-temperature annealing method. The memory window could be widened even with enhanced reset stability and conductance distribution. Temperature-dependent conductance change has been measured in order to figure out the substantial component of conductive filament and the mechanism of thermal recovery. The experimental evidences show that the reset breakdown process is the result of unwanted Si dangling bond (Si-DB) formation. By thermal recovery, Ni filament could be ruptured without applying a high electric field which induces negative set.

KW - Negative set

KW - Reset breakdown

KW - Resistiveswitching random access memory (RRAM)

KW - Si-rich nitride (SiN)

KW - Thermal recovery

UR - http://www.scopus.com/inward/record.url?scp=85082846099&partnerID=8YFLogxK

U2 - 10.1109/TED.2020.2976106

DO - 10.1109/TED.2020.2976106

M3 - Article

AN - SCOPUS:85082846099

SN - 0018-9383

VL - 67

SP - 1600

EP - 1605

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

M1 - 9031742

ER -

Investigation of the Thermal Recovery from Reset Breakdown of a SiN_x-Based RRAM

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this