TY - JOUR
T1 - Investigations of the low dielectric constant fluorinated polyimide for use as the interlayer dielectric in ULSI
AU - Lee, Y. K.
AU - Murarka, S. P.
AU - Jeng, S. P.
AU - Auman, B.
PY - 1995
Y1 - 1995
N2 - Low dielectric constant interlayer dielectric (ILD) materials are required for the advanced silicon integrated electronics such as those in the ULSI era. We have investigated several such materials. In this paper the results of our investigations of the materials and electrical properties, processing (to form ILD), and applicability of a DuPont fluorinated polyimide are described and discussed. Weight loss, FTIR, and ellipsometric measurements have been carried out. The DuPont fluorinated polyimide thin film was observed to be thermally stable up to 450 °C, which is monitored by using dynamic TGA with a ramping rate of 10 °C/min or 5 °C/min in N2 Ambient. Also MPOS capacitor characterization, effect of temperature and moisture on these properties have been determined. The dielectric constant was observed to be as low as 2.5 and the refractive index is around 1.63, both being stable up to 450 °C. However, the DuPont Fluorinated polyimide exhibited a flat band voltage shift on C-V curve after 400 °C annealing in vacuum environments for 1 hr. Compatibility with copper as the interconnecting metal has been determined and discussed. It is concluded that this polymer is a possible candidate for ILD application.
AB - Low dielectric constant interlayer dielectric (ILD) materials are required for the advanced silicon integrated electronics such as those in the ULSI era. We have investigated several such materials. In this paper the results of our investigations of the materials and electrical properties, processing (to form ILD), and applicability of a DuPont fluorinated polyimide are described and discussed. Weight loss, FTIR, and ellipsometric measurements have been carried out. The DuPont fluorinated polyimide thin film was observed to be thermally stable up to 450 °C, which is monitored by using dynamic TGA with a ramping rate of 10 °C/min or 5 °C/min in N2 Ambient. Also MPOS capacitor characterization, effect of temperature and moisture on these properties have been determined. The dielectric constant was observed to be as low as 2.5 and the refractive index is around 1.63, both being stable up to 450 °C. However, the DuPont Fluorinated polyimide exhibited a flat band voltage shift on C-V curve after 400 °C annealing in vacuum environments for 1 hr. Compatibility with copper as the interconnecting metal has been determined and discussed. It is concluded that this polymer is a possible candidate for ILD application.
UR - http://www.scopus.com/inward/record.url?scp=0029200934&partnerID=8YFLogxK
U2 - 10.1557/proc-381-31
DO - 10.1557/proc-381-31
M3 - Conference article
AN - SCOPUS:0029200934
SN - 0272-9172
VL - 381
SP - 31
EP - 43
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the Spring Meeting on MRS
Y2 - 17 April 1995 through 20 April 1995
ER -