IR laser flip-chip bonding

Joohan Kim, Chun Sam Song, Hyun Sik Ji, Jong Hyeong Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A flip-chip bonding process using an IR laser was developed. A focused laser beam can be irradiated on solder balls directly through a silicon wafer using a laser beam of 1064 nm. The focused diameter of a laser beam is around 200 03BC;m which is compatible with the solder ball pitch. A laser scanning system was used for scanning multi-solder-balls with a pre-programmed path. The laser flip-chip bonding process shows its strength on fast bonding, minimized thermal effects on the substrates, and superior bonding quality. A few second bonding time can be achieved for the IR flip-chip bonding process. Moreover, bonding for fine-pitch solder-balls can be achieved with a precision control of laser photonic energy. A DPSS Nd:Yag laser is used as a IR laser source and a power density is around 28 kW/cm2. Bonded flip-chips are presented and its characteristics are discussed.

Original languageEnglish
Title of host publicationICCAS 2007 - International Conference on Control, Automation and Systems
Pages2795-2798
Number of pages4
DOIs
StatePublished - 2007
EventInternational Conference on Control, Automation and Systems, ICCAS 2007 - Seoul, Korea, Republic of
Duration: 17 Oct 200720 Oct 2007

Publication series

NameICCAS 2007 - International Conference on Control, Automation and Systems

Conference

ConferenceInternational Conference on Control, Automation and Systems, ICCAS 2007
Country/TerritoryKorea, Republic of
CitySeoul
Period17/10/0720/10/07

Keywords

  • Bonding
  • Flip-chip
  • IR laser
  • Packaging

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