IsoKV: An Isolation Scheme for Key-Value Stores by Exploiting Internal Parallelism in SSD

Heerak Lim, Hwajung Kim, Kihyeon Myung, Heon Young, Yongseok Son

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Modern data centers aim to take advantage of high parallelism in storage devices for I/O intensive applications such as storage servers, cache systems, and key-value stores. Key-value stores are the most typical applications that should provide a highly reliable service with high-performance. To increase the I/O performance of key-value stores, many data centers have actively adopted next-generation storage devices such as Non-Volatile Memory Express (NVMe) based Solid State Devices (SSDs). NVMe SSDs and its protocol are characterized to provide a high degree of parallelism. However, they may not guarantee predictable performance while providing high performance and parallelism. For example, heavily mixed read and write requests can result in performance degradation of throughput and response time due to the interference between the requests and internal operations (e.g., Garbage Collection (GC)). To minimize the interference and provide higher performance, this paper presents IsoKV, an isolation scheme for key-value stores by exploiting internal parallelism in SSDs. IsoKV manages the level of parallelism of SSD directly by running application-driven flash management scheme. By storing data with different characteristics in each dedicated internal parallel units of SSD, IsoKV reduces interference between I/O requests. Also, IsoKV synchronizes the LSM-tree logic and data management in SSD to eliminate GC. We implement IsoKV on RocksDB and evaluate it using Open-Channel SSD. Our extensive experiments have shown that IsoKV improves overall throughput and response time on average 1.20× and 43% compared with the existing scheme, respectively.

Original languageEnglish
Title of host publicationProceedings - 26th IEEE International Conference on High Performance Computing, HiPC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages247-256
Number of pages10
ISBN (Electronic)9781728145358
DOIs
StatePublished - Dec 2019
Event26th Annual IEEE International Conference on High Performance Computing, HiPC 2019 - Hyderabad, India
Duration: 17 Dec 201920 Dec 2019

Publication series

NameProceedings - 26th IEEE International Conference on High Performance Computing, HiPC 2019

Conference

Conference26th Annual IEEE International Conference on High Performance Computing, HiPC 2019
Country/TerritoryIndia
CityHyderabad
Period17/12/1920/12/19

Keywords

  • FTL
  • LSM-tree
  • NAND-flash
  • NVMe
  • Open-Channel-SSD
  • Storage

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