Ka-Band MMIC Using AlGaN/GaN-on-Si with Recessed High-κ Dual MIS Structure

Dong Hwan Kim; Hongjong Park; Su Keun Eom; Jun Seok Jeong; Ho Young Cha; Kwang Seok Seo

doi:10.1109/LED.2018.2834223

Ka-Band MMIC Using AlGaN/GaN-on-Si with Recessed High-κ Dual MIS Structure

Dong Hwan Kim, Hongjong Park, Su Keun Eom, Jun Seok Jeong, Ho Young Cha, Kwang Seok Seo

Dept. of Mechanical System and Design Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal-insulator-semiconductor (MIS) structure with SiN_x/HfON dual dielectric layers. The fabricated 0.15-μm AlGaN/GaN-on-Si high electron-mobility transistor (HEMT) exhibited a low OFF-state current and reduced current collapse in comparison with the conventional Schottky gate HEMT; therefore, an enhanced output power of the PA MMIC is achieved. The fabricated two-stage PA MMIC exhibited a continuous-wave output power of >29 dBm with a power-added efficiency (PAE) of 14.5% at the drain voltage of 20 V, at 26.5 GHz.

Original language	English
Pages (from-to)	995-998
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	7
DOIs	https://doi.org/10.1109/LED.2018.2834223
State	Published - Jul 2018

Keywords

AlGaN/GaN-on-Si
dual MIS
gate recess
high-k
Ka-band
MMIC
power amplifier

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10.1109/LED.2018.2834223

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@article{8c5e5ecc1fee4066807a6360fe3caa7c,

title = "Ka-Band MMIC Using AlGaN/GaN-on-Si with Recessed High-κ Dual MIS Structure",

abstract = "This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal-insulator-semiconductor (MIS) structure with SiNx/HfON dual dielectric layers. The fabricated 0.15-μm AlGaN/GaN-on-Si high electron-mobility transistor (HEMT) exhibited a low OFF-state current and reduced current collapse in comparison with the conventional Schottky gate HEMT; therefore, an enhanced output power of the PA MMIC is achieved. The fabricated two-stage PA MMIC exhibited a continuous-wave output power of >29 dBm with a power-added efficiency (PAE) of 14.5\% at the drain voltage of 20 V, at 26.5 GHz.",

keywords = "AlGaN/GaN-on-Si, dual MIS, gate recess, high-k, Ka-band, MMIC, power amplifier",

author = "Kim, \{Dong Hwan\} and Hongjong Park and Eom, \{Su Keun\} and Jeong, \{Jun Seok\} and Cha, \{Ho Young\} and Seo, \{Kwang Seok\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2018",

month = jul,

doi = "10.1109/LED.2018.2834223",

language = "English",

volume = "39",

pages = "995--998",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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TY - JOUR

T1 - Ka-Band MMIC Using AlGaN/GaN-on-Si with Recessed High-κ Dual MIS Structure

AU - Kim, Dong Hwan

AU - Park, Hongjong

AU - Eom, Su Keun

AU - Jeong, Jun Seok

AU - Cha, Ho Young

AU - Seo, Kwang Seok

PY - 2018/7

Y1 - 2018/7

N2 - This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal-insulator-semiconductor (MIS) structure with SiNx/HfON dual dielectric layers. The fabricated 0.15-μm AlGaN/GaN-on-Si high electron-mobility transistor (HEMT) exhibited a low OFF-state current and reduced current collapse in comparison with the conventional Schottky gate HEMT; therefore, an enhanced output power of the PA MMIC is achieved. The fabricated two-stage PA MMIC exhibited a continuous-wave output power of >29 dBm with a power-added efficiency (PAE) of 14.5% at the drain voltage of 20 V, at 26.5 GHz.

AB - This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal-insulator-semiconductor (MIS) structure with SiNx/HfON dual dielectric layers. The fabricated 0.15-μm AlGaN/GaN-on-Si high electron-mobility transistor (HEMT) exhibited a low OFF-state current and reduced current collapse in comparison with the conventional Schottky gate HEMT; therefore, an enhanced output power of the PA MMIC is achieved. The fabricated two-stage PA MMIC exhibited a continuous-wave output power of >29 dBm with a power-added efficiency (PAE) of 14.5% at the drain voltage of 20 V, at 26.5 GHz.

KW - AlGaN/GaN-on-Si

KW - dual MIS

KW - gate recess

KW - high-k

KW - Ka-band

KW - MMIC

KW - power amplifier

UR - https://www.scopus.com/pages/publications/85046412054

U2 - 10.1109/LED.2018.2834223

DO - 10.1109/LED.2018.2834223

M3 - Article

AN - SCOPUS:85046412054

SN - 0741-3106

VL - 39

SP - 995

EP - 998

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -

Ka-Band MMIC Using AlGaN/GaN-on-Si with Recessed High-κ Dual MIS Structure

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Keywords

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