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Leakage-Based Temperature Sensor with Incremental Analog-to-Digital Converter

  • Seoul National University of Science and Technology (SNUST)

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ahstract-A complementary metal-oxide-semiconductor (CMOS) temperature sensor employing the drain-induced barrier-lowering (DIBL) effect with an incremental analog-to-digital converter (ADC) is presented. The proposed sensor features a compact size and achieves low-power operation utilizing a linearized leakage-current-to-temperature relationship. The incremental ADC is designed for digital readout in real-time.

Original languageEnglish
Title of host publicationInternational SoC Design Conference 2025, ISOCC 2025 - Proceedings of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798331586423
DOIs
StatePublished - 2025
Event22nd International SoC Design Conference, ISOCC 2025 - Busan, Korea, Republic of
Duration: 15 Oct 202518 Oct 2025

Publication series

NameInternational SoC Design Conference 2025, ISOCC 2025 - Proceedings of Technical Papers

Conference

Conference22nd International SoC Design Conference, ISOCC 2025
Country/TerritoryKorea, Republic of
CityBusan
Period15/10/2518/10/25

Keywords

  • CMOS temperature sensor
  • Incremental ADC
  • leakage-based

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