Lifetime prediction of IGBT modules based on linear damage accumulation

Ui Min Choi, Frede Blaabjerg, Ke Ma

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

In this paper, the lifetime prediction of power device modules based on the linear damage accumulation in conjunction with real mission profile assessment is studied. Four tests are performed under two superimposed power cycling conditions using an advanced power cycling test setup with 600 V, 30 A, 3-phase molded IGBT modules. The superimposed power cycling conditions are made based on a new lifetime model in respect to junction temperature swing duration, which has been developed based on 39 power cycling test results. The experimental results validate the lifetime prediction of the IGBT modules based on the linear damage accumulation by comparing it with the predicted lifetime from the lifetime model.

Original languageEnglish
Title of host publication2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2276-2281
Number of pages6
ISBN (Electronic)9781509053667
DOIs
StatePublished - 17 May 2017
Event32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017 - Tampa, United States
Duration: 26 Mar 201730 Mar 2017

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017
Country/TerritoryUnited States
CityTampa
Period26/03/1730/03/17

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