Localized switching mechanism in resistive switching of atomic-layer-deposited Ti O2 thin films

Kyung Min Kim; Byung Joon Choi; Cheol Seong Hwang

doi:10.1063/1.2748312

Localized switching mechanism in resistive switching of atomic-layer-deposited Ti O2 thin films

Kyung Min Kim, Byung Joon Choi, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

215 Scopus citations

Abstract

The resistance switching mechanism of Ti O2 films under voltage sweep mode was investigated. From the observed soft set of PtTi O2 Pt sample and from the polarity-dependant switching behavior of Ir (O) Ti O2 Pt sample, local rupture and recovery of conducting filaments near the anode interface wer identified as the switching mechanism. This is consistent with the authors' recent observation [K. Kim, Electrchem. Solid-State Lett. 9, G343 (2006)] of the resistance switching property of Al2 O3 Ti O2 multilayers, where switching was controlled by the layer close to the anode. It appears that most parts of the filaments are preserved during switching and only a small portion of the film near the anode contributes to switching.

Original language	English
Article number	242906
Journal	Applied Physics Letters
Volume	90
Issue number	24
DOIs	https://doi.org/10.1063/1.2748312
State	Published - 2007

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title = "Localized switching mechanism in resistive switching of atomic-layer-deposited Ti O2 thin films",

abstract = "The resistance switching mechanism of Ti O2 films under voltage sweep mode was investigated. From the observed soft set of PtTi O2 Pt sample and from the polarity-dependant switching behavior of Ir (O) Ti O2 Pt sample, local rupture and recovery of conducting filaments near the anode interface wer identified as the switching mechanism. This is consistent with the authors' recent observation [K. Kim, Electrchem. Solid-State Lett. 9, G343 (2006)] of the resistance switching property of Al2 O3 Ti O2 multilayers, where switching was controlled by the layer close to the anode. It appears that most parts of the filaments are preserved during switching and only a small portion of the film near the anode contributes to switching.",

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doi = "10.1063/1.2748312",

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AU - Kim, Kyung Min

AU - Choi, Byung Joon

AU - Hwang, Cheol Seong

PY - 2007

Y1 - 2007

N2 - The resistance switching mechanism of Ti O2 films under voltage sweep mode was investigated. From the observed soft set of PtTi O2 Pt sample and from the polarity-dependant switching behavior of Ir (O) Ti O2 Pt sample, local rupture and recovery of conducting filaments near the anode interface wer identified as the switching mechanism. This is consistent with the authors' recent observation [K. Kim, Electrchem. Solid-State Lett. 9, G343 (2006)] of the resistance switching property of Al2 O3 Ti O2 multilayers, where switching was controlled by the layer close to the anode. It appears that most parts of the filaments are preserved during switching and only a small portion of the film near the anode contributes to switching.

AB - The resistance switching mechanism of Ti O2 films under voltage sweep mode was investigated. From the observed soft set of PtTi O2 Pt sample and from the polarity-dependant switching behavior of Ir (O) Ti O2 Pt sample, local rupture and recovery of conducting filaments near the anode interface wer identified as the switching mechanism. This is consistent with the authors' recent observation [K. Kim, Electrchem. Solid-State Lett. 9, G343 (2006)] of the resistance switching property of Al2 O3 Ti O2 multilayers, where switching was controlled by the layer close to the anode. It appears that most parts of the filaments are preserved during switching and only a small portion of the film near the anode contributes to switching.

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M3 - Article

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SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242906

ER -

Localized switching mechanism in resistive switching of atomic-layer-deposited Ti O2 thin films

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