Machine Learning-Driven Modeling for Fast and Accurate Z-Interference Estimation in 3D NAND Scaling

Hyeon Seo Yun, Jong Kyung Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This study presents a CatBoost-based regression model to predict Z-interference (Z-ITF) in scaled 3D NAND Flash. Unlike traditional TCAD or curve fitting, the model uses initial/final attack and victim cell states, improving adaptability to future scaling. It accurately predicts Vth shifts across various WL pitches, showing a 2-3× Z-ITF increase as ON pitch shrinks from 63 nm to 50 nm. The model helps identify critical scaling limits for improved reliability and error correction.

Original languageEnglish
Title of host publication2025 Silicon Nanoelectronics Workshop, SNW 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages94-95
Number of pages2
ISBN (Electronic)9784863488168
DOIs
StatePublished - 2025
Event2025 Silicon Nanoelectronics Workshop, SNW 2025 - Kyoto, Japan
Duration: 8 Jun 20259 Jun 2025

Publication series

Name2025 Silicon Nanoelectronics Workshop, SNW 2025

Conference

Conference2025 Silicon Nanoelectronics Workshop, SNW 2025
Country/TerritoryJapan
CityKyoto
Period8/06/259/06/25

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