TY - JOUR
T1 - Magneto-logic device based on a single-layer magnetic tunnel junction
AU - Lee, Seungyeon
AU - Choa, Sunghoon
AU - Lee, Seungjun
AU - Shin, Hyungsoon
PY - 2007/8
Y1 - 2007/8
N2 - A magnetic tunnel junction (MTJ) element can compute Boolean functions and also store the output of its last operation. Therefore, the MTJ shows potential for a universal logic element to implement sequential-logic functions as well as combinatorial ones. The established magneto-logic element has been designed and fabricated based on a triple-layer MTJ. We present a novel magneto-logic structure that consists of a single-layer MTJ and a current driver, which requires less processing steps with enhanced functional flexibility and uniformity.
AB - A magnetic tunnel junction (MTJ) element can compute Boolean functions and also store the output of its last operation. Therefore, the MTJ shows potential for a universal logic element to implement sequential-logic functions as well as combinatorial ones. The established magneto-logic element has been designed and fabricated based on a triple-layer MTJ. We present a novel magneto-logic structure that consists of a single-layer MTJ and a current driver, which requires less processing steps with enhanced functional flexibility and uniformity.
KW - Magnetic tunnel junction (MTJ)
KW - Magnetoresistive devices
KW - Nonvolatile logic devices
UR - https://www.scopus.com/pages/publications/34547855815
U2 - 10.1109/TED.2007.900683
DO - 10.1109/TED.2007.900683
M3 - Article
AN - SCOPUS:34547855815
SN - 0018-9383
VL - 54
SP - 2040
EP - 2044
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
ER -