Magneto-logic device based on a single-layer magnetic tunnel junction

Seungyeon Lee; Sunghoon Choa; Seungjun Lee; Hyungsoon Shin

doi:10.1109/TED.2007.900683

Magneto-logic device based on a single-layer magnetic tunnel junction

Seungyeon Lee
, Sunghoon Choa
, Seungjun Lee
, Hyungsoon Shin

Dept. of Semiconductor Engineering

Ewha Womans University

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

A magnetic tunnel junction (MTJ) element can compute Boolean functions and also store the output of its last operation. Therefore, the MTJ shows potential for a universal logic element to implement sequential-logic functions as well as combinatorial ones. The established magneto-logic element has been designed and fabricated based on a triple-layer MTJ. We present a novel magneto-logic structure that consists of a single-layer MTJ and a current driver, which requires less processing steps with enhanced functional flexibility and uniformity.

Original language	English
Pages (from-to)	2040-2044
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	8
DOIs	https://doi.org/10.1109/TED.2007.900683
State	Published - Aug 2007

Keywords

Magnetic tunnel junction (MTJ)
Magnetoresistive devices
Nonvolatile logic devices

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10.1109/TED.2007.900683

Cite this

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KW - Magnetoresistive devices

KW - Nonvolatile logic devices

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Magneto-logic device based on a single-layer magnetic tunnel junction

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Keywords

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