Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized CoPd multilayers

Dongwon Lim; Sungdong Kim; Seong Rae Lee

doi:10.1063/1.1845932

Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized CoPd multilayers

Dongwon Lim, Sungdong Kim, Seong Rae Lee

Dept. of Mechanical System and Design Engineering

Korea University

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We investigated perpendicularly magnetized magnetic tunnel junctions (pMTJs) using CoPd multilayers and the effects of multilayer structure on the magnetoresistance. We obtained a tunneling magneto-resistance (TMR) ratio of 12.6% in a pseudo-pMTJ with a 9-nm -thick Pd underlayer. The number of bilayers of PdCo affected the magnetic anisotropy and the junction resistance. The TMR increased with the Pd underlayer because the interface uniformity and interface structure of the tunnel barrier (Al Ox) layer were improved. An exchange-biased pMTJ with IrMn had a small TMR because the antiferromagnetic layer increased the resistance of the pMTJ and reduced the spin polarization.

Original language	English
Article number	10C902
Journal	Journal of Applied Physics
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.1845932
State	Published - 15 May 2005

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title = "Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized CoPd multilayers",

abstract = "We investigated perpendicularly magnetized magnetic tunnel junctions (pMTJs) using CoPd multilayers and the effects of multilayer structure on the magnetoresistance. We obtained a tunneling magneto-resistance (TMR) ratio of 12.6\% in a pseudo-pMTJ with a 9-nm -thick Pd underlayer. The number of bilayers of PdCo affected the magnetic anisotropy and the junction resistance. The TMR increased with the Pd underlayer because the interface uniformity and interface structure of the tunnel barrier (Al Ox) layer were improved. An exchange-biased pMTJ with IrMn had a small TMR because the antiferromagnetic layer increased the resistance of the pMTJ and reduced the spin polarization.",

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T1 - Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized CoPd multilayers

AU - Lim, Dongwon

AU - Kim, Sungdong

AU - Lee, Seong Rae

PY - 2005/5/15

Y1 - 2005/5/15

N2 - We investigated perpendicularly magnetized magnetic tunnel junctions (pMTJs) using CoPd multilayers and the effects of multilayer structure on the magnetoresistance. We obtained a tunneling magneto-resistance (TMR) ratio of 12.6% in a pseudo-pMTJ with a 9-nm -thick Pd underlayer. The number of bilayers of PdCo affected the magnetic anisotropy and the junction resistance. The TMR increased with the Pd underlayer because the interface uniformity and interface structure of the tunnel barrier (Al Ox) layer were improved. An exchange-biased pMTJ with IrMn had a small TMR because the antiferromagnetic layer increased the resistance of the pMTJ and reduced the spin polarization.

AB - We investigated perpendicularly magnetized magnetic tunnel junctions (pMTJs) using CoPd multilayers and the effects of multilayer structure on the magnetoresistance. We obtained a tunneling magneto-resistance (TMR) ratio of 12.6% in a pseudo-pMTJ with a 9-nm -thick Pd underlayer. The number of bilayers of PdCo affected the magnetic anisotropy and the junction resistance. The TMR increased with the Pd underlayer because the interface uniformity and interface structure of the tunnel barrier (Al Ox) layer were improved. An exchange-biased pMTJ with IrMn had a small TMR because the antiferromagnetic layer increased the resistance of the pMTJ and reduced the spin polarization.

UR - https://www.scopus.com/pages/publications/20944440387

U2 - 10.1063/1.1845932

DO - 10.1063/1.1845932

M3 - Article

AN - SCOPUS:20944440387

SN - 0021-8979

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 10C902

ER -

Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized CoPd multilayers

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