Microstructure and mechanical properties of aluminum-germanium eutectic bonding with polysilicon metallization for microelectromechanical systems (MEMS) packaging

Woo Tae Park; Jin Wook Jang; Troy Clare; Lianjun Liu

doi:10.1016/j.scriptamat.2010.12.024

Microstructure and mechanical properties of aluminum-germanium eutectic bonding with polysilicon metallization for microelectromechanical systems (MEMS) packaging

Woo Tae Park, Jin Wook Jang, Troy Clare, Lianjun Liu

Dept. of Mechanical & Automotive Engineering

Freescale Semiconductor

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Wafer bonding using Al-Ge eutectic alloy was developed for the microelectromechanical system package. During bonding, Al-Ge eutectic melting primarily occurred, with an active involvement of poly-Si. Bonding microstructure consists of Al layer and Si-Ge-Al alloy layer, corresponding to the crystal structure and bonding geometry. Active reaction ensures the strong chemical bonding and reliable hermetic sealing. At the higher bonding pressure, the microstructure was slightly modified. Shear test showed a direct correlation between bonding strength and bonding pressure.

Original language	English
Pages (from-to)	733-736
Number of pages	4
Journal	Scripta Materialia
Volume	64
Issue number	8
DOIs	https://doi.org/10.1016/j.scriptamat.2010.12.024
State	Published - Apr 2011

Keywords

Aluminium alloys
Mechanical properties
MEMS
Thermomechanical processing
Thin films

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10.1016/j.scriptamat.2010.12.024

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@article{e8fa677613434f1687b031a03af0fa7d,

title = "Microstructure and mechanical properties of aluminum-germanium eutectic bonding with polysilicon metallization for microelectromechanical systems (MEMS) packaging",

abstract = "Wafer bonding using Al-Ge eutectic alloy was developed for the microelectromechanical system package. During bonding, Al-Ge eutectic melting primarily occurred, with an active involvement of poly-Si. Bonding microstructure consists of Al layer and Si-Ge-Al alloy layer, corresponding to the crystal structure and bonding geometry. Active reaction ensures the strong chemical bonding and reliable hermetic sealing. At the higher bonding pressure, the microstructure was slightly modified. Shear test showed a direct correlation between bonding strength and bonding pressure.",

keywords = "Aluminium alloys, Mechanical properties, MEMS, Thermomechanical processing, Thin films",

author = "Park, \{Woo Tae\} and Jang, \{Jin Wook\} and Troy Clare and Lianjun Liu",

year = "2011",

month = apr,

doi = "10.1016/j.scriptamat.2010.12.024",

language = "English",

volume = "64",

pages = "733--736",

journal = "Scripta Materialia",

issn = "1359-6462",

number = "8",

}

TY - JOUR

T1 - Microstructure and mechanical properties of aluminum-germanium eutectic bonding with polysilicon metallization for microelectromechanical systems (MEMS) packaging

AU - Park, Woo Tae

AU - Jang, Jin Wook

AU - Clare, Troy

AU - Liu, Lianjun

PY - 2011/4

Y1 - 2011/4

N2 - Wafer bonding using Al-Ge eutectic alloy was developed for the microelectromechanical system package. During bonding, Al-Ge eutectic melting primarily occurred, with an active involvement of poly-Si. Bonding microstructure consists of Al layer and Si-Ge-Al alloy layer, corresponding to the crystal structure and bonding geometry. Active reaction ensures the strong chemical bonding and reliable hermetic sealing. At the higher bonding pressure, the microstructure was slightly modified. Shear test showed a direct correlation between bonding strength and bonding pressure.

AB - Wafer bonding using Al-Ge eutectic alloy was developed for the microelectromechanical system package. During bonding, Al-Ge eutectic melting primarily occurred, with an active involvement of poly-Si. Bonding microstructure consists of Al layer and Si-Ge-Al alloy layer, corresponding to the crystal structure and bonding geometry. Active reaction ensures the strong chemical bonding and reliable hermetic sealing. At the higher bonding pressure, the microstructure was slightly modified. Shear test showed a direct correlation between bonding strength and bonding pressure.

KW - Aluminium alloys

KW - Mechanical properties

KW - MEMS

KW - Thermomechanical processing

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=79951513135&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2010.12.024

DO - 10.1016/j.scriptamat.2010.12.024

M3 - Article

AN - SCOPUS:79951513135

SN - 1359-6462

VL - 64

SP - 733

EP - 736

JO - Scripta Materialia

JF - Scripta Materialia

IS - 8

ER -

Microstructure and mechanical properties of aluminum-germanium eutectic bonding with polysilicon metallization for microelectromechanical systems (MEMS) packaging

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Keywords

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