Abstract
Fine diameter polycrystalline silicon carbide fibers were prepared by electrospinning and sintering of aluminum doped polycarbosilane. Fully dense and completely polycrystalline SiC fibers were obtained after sintering at 2000 °C. The diameter of the fibers was in the range of 0.5 to 2 μm. The SiC crystallite size in the fiber sintered at 2000 °C was about 200 nm and many stacking faults and twins were observed inside the SiC crystallites. A residual carbon phase was segregated on the fiber surface and at the grain boundaries in the form of microcrystalline graphite. When oxidized at 1200 °C, the fiber showed good adhesion with the oxidation layer formed on the fiber surface.
| Original language | English |
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| Pages (from-to) | 298-304 |
| Number of pages | 7 |
| Journal | Journal of Ceramic Processing Research |
| Volume | 15 |
| Issue number | 5 |
| State | Published - 2014 |
Keywords
- Electrospinning
- Energy efficiency
- Polyaluminocarbosilane
- Polycrystalline SiC web
- Residual carbon
- Sintering