Minimum detectable strain improvement in junctionless nanowire FET sensors

Pushpapraj Singh; Jianmin Miao; Woo Tae Park; Dim Lee Kwong

doi:10.1109/MEMSYS.2012.6170403

Minimum detectable strain improvement in junctionless nanowire FET sensors

Pushpapraj Singh, Jianmin Miao, Woo Tae Park, Dim Lee Kwong

Dept. of Mechanical & Automotive Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We present the piezoresistive and noise measurement results on junctionless nanowire field-effect transistor (JL-NWFET). Results reveal the channel doping and gate bias impacts on the piezoresistance, threshold voltage and low frequency noise (LFN). In JL-NWFET, at a doping level of 6.7×10 ¹⁸ cm ^-3, we found 91% increment in the piezoresistive effect compared to device with a doping level 6.7×10 ¹⁹ cm ^-3. The JL-NWFET shows ∼5 orders of magnitude lower spectral noise than the inversion mode FETs, and LFN is found less sensitive to gate bias voltage. Channel doping shows a wide tunability of threshold voltage without any influence on LFN. The picoampere drain current noise helps achieve a superior resolution (minimum detectable strain) and formulate JL-NWFET as an ultrasensitive sensing element for the nanoelectromechanical sensors.

Original language	English
Title of host publication	2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Pages	1328-1331
Number of pages	4
DOIs	https://doi.org/10.1109/MEMSYS.2012.6170403
State	Published - 2012
Event	2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 - Paris, France Duration: 29 Jan 2012 → 2 Feb 2012

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)	1084-6999

Conference

Conference	2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Country/Territory	France
City	Paris
Period	29/01/12 → 2/02/12

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10.1109/MEMSYS.2012.6170403

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Singh, P., Miao, J., Park, W. T., & Kwong, D. L. (2012). Minimum detectable strain improvement in junctionless nanowire FET sensors. In 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 (pp. 1328-1331). Article 6170403 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2012.6170403

@inproceedings{7ca316124f4c460fa4968eec31a76305,

title = "Minimum detectable strain improvement in junctionless nanowire FET sensors",

abstract = "We present the piezoresistive and noise measurement results on junctionless nanowire field-effect transistor (JL-NWFET). Results reveal the channel doping and gate bias impacts on the piezoresistance, threshold voltage and low frequency noise (LFN). In JL-NWFET, at a doping level of 6.7×10 18 cm -3, we found 91\% increment in the piezoresistive effect compared to device with a doping level 6.7×10 19 cm -3. The JL-NWFET shows ∼5 orders of magnitude lower spectral noise than the inversion mode FETs, and LFN is found less sensitive to gate bias voltage. Channel doping shows a wide tunability of threshold voltage without any influence on LFN. The picoampere drain current noise helps achieve a superior resolution (minimum detectable strain) and formulate JL-NWFET as an ultrasensitive sensing element for the nanoelectromechanical sensors.",

author = "Pushpapraj Singh and Jianmin Miao and Park, \{Woo Tae\} and Kwong, \{Dim Lee\}",

year = "2012",

doi = "10.1109/MEMSYS.2012.6170403",

language = "English",

isbn = "9781467303248",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

pages = "1328--1331",

booktitle = "2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012",

note = "2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 ; Conference date: 29-01-2012 Through 02-02-2012",

}

Singh, P, Miao, J, Park, WT & Kwong, DL 2012, Minimum detectable strain improvement in junctionless nanowire FET sensors. in 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012., 6170403, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp. 1328-1331, 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012, Paris, France, 29/01/12. https://doi.org/10.1109/MEMSYS.2012.6170403

Minimum detectable strain improvement in junctionless nanowire FET sensors. / Singh, Pushpapraj; Miao, Jianmin; Park, Woo Tae et al.
2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012. 2012. p. 1328-1331 6170403 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Minimum detectable strain improvement in junctionless nanowire FET sensors

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AU - Miao, Jianmin

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AU - Kwong, Dim Lee

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N2 - We present the piezoresistive and noise measurement results on junctionless nanowire field-effect transistor (JL-NWFET). Results reveal the channel doping and gate bias impacts on the piezoresistance, threshold voltage and low frequency noise (LFN). In JL-NWFET, at a doping level of 6.7×10 18 cm -3, we found 91% increment in the piezoresistive effect compared to device with a doping level 6.7×10 19 cm -3. The JL-NWFET shows ∼5 orders of magnitude lower spectral noise than the inversion mode FETs, and LFN is found less sensitive to gate bias voltage. Channel doping shows a wide tunability of threshold voltage without any influence on LFN. The picoampere drain current noise helps achieve a superior resolution (minimum detectable strain) and formulate JL-NWFET as an ultrasensitive sensing element for the nanoelectromechanical sensors.

AB - We present the piezoresistive and noise measurement results on junctionless nanowire field-effect transistor (JL-NWFET). Results reveal the channel doping and gate bias impacts on the piezoresistance, threshold voltage and low frequency noise (LFN). In JL-NWFET, at a doping level of 6.7×10 18 cm -3, we found 91% increment in the piezoresistive effect compared to device with a doping level 6.7×10 19 cm -3. The JL-NWFET shows ∼5 orders of magnitude lower spectral noise than the inversion mode FETs, and LFN is found less sensitive to gate bias voltage. Channel doping shows a wide tunability of threshold voltage without any influence on LFN. The picoampere drain current noise helps achieve a superior resolution (minimum detectable strain) and formulate JL-NWFET as an ultrasensitive sensing element for the nanoelectromechanical sensors.

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T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

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T2 - 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012

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Minimum detectable strain improvement in junctionless nanowire FET sensors

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