Abstract
One of the major causes for the operation failure and/or malfunction in a voltage source inverter is from power semiconductor devices, such as MOSFET and IGBT. Especially, under harsh operating environments, the power devices face various mechanical/thermal challenges, which can increase the equipment/device failure rate and cause unexpected interruptions and/or serious safety issues. This paper focuses on estimating the ON-resistance of the MOSFET/IGBT devices in real time while operating in space-vector pulsewidth modulation mode to monitor the status on power MOSFET/IGBT devices in real time, hoping that it can avoid those unexpected interruptions for safety. Since the increase in ON-resistance of the power MOSFET is identified as the fault signature, it is worthwhile to measure ON-resistance to prevent the output voltage distortions and the amplitude reduction from the set reference voltage in advance.
| Original language | English |
|---|---|
| Pages (from-to) | 28-34 |
| Number of pages | 7 |
| Journal | Canadian Journal of Electrical and Computer Engineering |
| Volume | 41 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1 Dec 2018 |
Keywords
- Direct compensation
- MOSFET/IGBT devices
- ON-resistance
- output voltage error
- space-vector pulsewidth modulation (SVPWM)
- three-phase inverter
- voltage drop
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