Monitoring ON-Resistance of MOSFET Devices in Real Time for SVPWM-VSI with Direct Compensation

Yongkeun Lee, Jongwang Kim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

One of the major causes for the operation failure and/or malfunction in a voltage source inverter is from power semiconductor devices, such as MOSFET and IGBT. Especially, under harsh operating environments, the power devices face various mechanical/thermal challenges, which can increase the equipment/device failure rate and cause unexpected interruptions and/or serious safety issues. This paper focuses on estimating the ON-resistance of the MOSFET/IGBT devices in real time while operating in space-vector pulsewidth modulation mode to monitor the status on power MOSFET/IGBT devices in real time, hoping that it can avoid those unexpected interruptions for safety. Since the increase in ON-resistance of the power MOSFET is identified as the fault signature, it is worthwhile to measure ON-resistance to prevent the output voltage distortions and the amplitude reduction from the set reference voltage in advance.

Original languageEnglish
Pages (from-to)28-34
Number of pages7
JournalCanadian Journal of Electrical and Computer Engineering
Volume41
Issue number1
DOIs
StatePublished - 1 Dec 2018

Keywords

  • Direct compensation
  • MOSFET/IGBT devices
  • ON-resistance
  • output voltage error
  • space-vector pulsewidth modulation (SVPWM)
  • three-phase inverter
  • voltage drop

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