Mote₂ field‐effect transistors with low contact resistance through phase tuning by laser irradiation

Due to their extraordinary electrical and physical properties, two‐dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next‐generation electrical devices. However, the application of TMD‐based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs’ surface. Here, we introduce a facile phase‐tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi‐metallic monoclinic (1T’) molybdenum ditelluride (MoTe₂). The formation of ohmic contacts increases the charge carrier mobility of MoTe₂ field‐effect transistor devices to 16.1 cm² V⁻¹s⁻¹ with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large‐area scaling for the creation of high‐performance 2D electronic devices.