TY - JOUR
T1 - Multiplexed Silicon Nanowire Tunnel FET-Based Biosensors with Optimized Multi-Sensing Currents
AU - Kim, Sihyun
AU - Lee, Ryoongbin
AU - Kwon, Daewoong
AU - Kim, Tae Hyeon
AU - Park, Tae Jung
AU - Choi, Sung Jin
AU - Mo, Hyun Sun
AU - Kim, Dae Hwan
AU - Park, Byung Gook
N1 - Publisher Copyright:
© 2001-2012 IEEE.
PY - 2021/4/1
Y1 - 2021/4/1
N2 - In this study, silicon nanowire (SiNW) FET-based and SiNW tunnel FET (TFET)-based biosensors are co-integrated with CMOS circuits by using top-down approached and CMOS-compatible back-end process simultaneously. The possibility of multiplexed sensing is verified with the fabricated FET and TFET biosensors. For multiplexed-sensing, two separate sensing materials which react with two distinct bio-targets are formed by partially capping the gold on SiO2 film through a lift-off process. Then two bio-receptors which selectively combine to the gold and the SiO2 are deposited. After the reaction of each biomolecule to each receptor, the changes of saturation and gate-induced-drain-leakage (GIDL) currents are monitored in the FET sensor. It is experimentally confirmed that two different biomolecules are independently detectable by the changes of the saturation and the GIDL currents in the FET sensor. To solve the dependence of the gold formation position on the sensitivity as well as the large current difference between the saturation and the GIDL currents, we demonstrated the TFET biosensor which uses the changes of tunneling and ambipolar currents generated in the source and the drain end. As a result, it is clearly revealed that two different biomolecules can be detected without interference, regardless of the position of the gold layer by the changes of the tunneling and the ambipolar currents with almost equivalent sensing current level.
AB - In this study, silicon nanowire (SiNW) FET-based and SiNW tunnel FET (TFET)-based biosensors are co-integrated with CMOS circuits by using top-down approached and CMOS-compatible back-end process simultaneously. The possibility of multiplexed sensing is verified with the fabricated FET and TFET biosensors. For multiplexed-sensing, two separate sensing materials which react with two distinct bio-targets are formed by partially capping the gold on SiO2 film through a lift-off process. Then two bio-receptors which selectively combine to the gold and the SiO2 are deposited. After the reaction of each biomolecule to each receptor, the changes of saturation and gate-induced-drain-leakage (GIDL) currents are monitored in the FET sensor. It is experimentally confirmed that two different biomolecules are independently detectable by the changes of the saturation and the GIDL currents in the FET sensor. To solve the dependence of the gold formation position on the sensitivity as well as the large current difference between the saturation and the GIDL currents, we demonstrated the TFET biosensor which uses the changes of tunneling and ambipolar currents generated in the source and the drain end. As a result, it is clearly revealed that two different biomolecules can be detected without interference, regardless of the position of the gold layer by the changes of the tunneling and the ambipolar currents with almost equivalent sensing current level.
KW - Biosensor with CMOS read-out circuit
KW - GIDL-based FET biosensor
KW - Multiplexed biosensor
KW - Tunnel FET biosensor
UR - http://www.scopus.com/inward/record.url?scp=85100470503&partnerID=8YFLogxK
U2 - 10.1109/JSEN.2021.3054052
DO - 10.1109/JSEN.2021.3054052
M3 - Article
AN - SCOPUS:85100470503
SN - 1530-437X
VL - 21
SP - 8839
EP - 8846
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 7
M1 - 9335001
ER -