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Nanometer-precision wafer thinning monitoring via comb-based terahertz Fabry-Pérot interferometry

  • Guseon Kang
  • , Jaeyoon Kim
  • , Dong Chel Shin
  • , Joohyung Lee
  • , Seung Woo Kim
  • , Young Jin Kim
  • Korea Advanced Institute of Science and Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We introduce frequency-comb-referenced THz Fabry-Pérot interferometry for nanometer-precision, non-destructive monitoring of semiconductor wafer thinning processes. Unlike traditional optical methods, our technique is immune to strong surface scattering and enables thickness precision down to 7.2 nm. By directly measuring absolute Fabry-Pérot mode frequencies stabilized by an optical frequency comb, we achieve rapid, accurate measurements even on rough wafer surfaces. This method outperforms existing THz techniques by three orders of magnitude and offers significant potential for real-time, in-line process monitoring in advanced semiconductor manufacturing.

Original languageEnglish
Title of host publicationTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIX
EditorsLaurence P. Sadwick, Tianxin Yang
PublisherSPIE
ISBN (Electronic)9781510697072
DOIs
StatePublished - 5 Mar 2026
Event19th Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications - San Francisco, United States
Duration: 19 Jan 202622 Jan 2026

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume13895
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference19th Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications
Country/TerritoryUnited States
CitySan Francisco
Period19/01/2622/01/26

Keywords

  • CW Terahertz
  • Frequency standards
  • Non-destructive testing
  • Optical Frequency Comb
  • Spectroscopy

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