Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes

Katsuhisa Murakami; Mathias Rommel; Boris Hudec; Alica Rosová; Kristína Hušeková; Edmund Dobročka; Raul Rammula; Aarne Kasikov; Jeong Hwan Han; Woongkyu Lee; Seul Ji Song; Albena Paskaleva; Anton J. Bauer; Lothar Frey; Karol Fröhlich; Jaan Aarik; Cheol Seong Hwang

doi:10.1021/am4049139

Nanoscale characterization of TiO₂ films grown by atomic layer deposition on RuO₂ electrodes

Katsuhisa Murakami, Mathias Rommel, Boris Hudec, Alica Rosová, Kristína Hušeková, Edmund Dobročka, Raul Rammula, Aarne Kasikov, Jeong Hwan Han, Woongkyu Lee, Seul Ji Song, Albena Paskaleva, Anton J. Bauer, Lothar Frey, Karol Fröhlich, Jaan Aarik, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Topography and leakage current maps of TiO₂ films grown by atomic layer deposition on RuO₂ electrodes using either a TiCl ₄ or a Ti(O-i-C₃H₇)₄ precursor were characterized at nanoscale by conductive atomic force microscopy (CAFM). For both films, the leakage current flows mainly through elevated grains and not along grain boundaries. The overall CAFM leakage current is larger and more localized for the TiCl₄-based films (0.63 nm capacitance equivalent oxide thickness, CET) compared to the Ti(O-i-C₃H₇) ₄-based films (0.68 nm CET). Both films have a physical thickness of ∼20 nm. The nanoscale leakage currents are consistent with macroscopic leakage currents from capacitor structures and are correlated with grain characteristics observed by topography maps and transmission electron microscopy as well as with X-ray diffraction.

Original language	English
Pages (from-to)	2486-2492
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	4
DOIs	https://doi.org/10.1021/am4049139
State	Published - 26 Feb 2014

Keywords

conductive AFM (CAFM)
high-k dielectrics
metal-insulator-metal (MIM) capacitor
RuO
TiO

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10.1021/am4049139

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Murakami, K., Rommel, M., Hudec, B., Rosová, A., Hušeková, K., Dobročka, E., Rammula, R., Kasikov, A., Han, J. H., Lee, W., Song, S. J., Paskaleva, A., Bauer, A. J., Frey, L., Fröhlich, K., Aarik, J., & Hwang, C. S. (2014). Nanoscale characterization of TiO₂ films grown by atomic layer deposition on RuO₂ electrodes. ACS Applied Materials and Interfaces, 6(4), 2486-2492. https://doi.org/10.1021/am4049139

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title = "Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes",

abstract = "Topography and leakage current maps of TiO2 films grown by atomic layer deposition on RuO2 electrodes using either a TiCl 4 or a Ti(O-i-C3H7)4 precursor were characterized at nanoscale by conductive atomic force microscopy (CAFM). For both films, the leakage current flows mainly through elevated grains and not along grain boundaries. The overall CAFM leakage current is larger and more localized for the TiCl4-based films (0.63 nm capacitance equivalent oxide thickness, CET) compared to the Ti(O-i-C3H7) 4-based films (0.68 nm CET). Both films have a physical thickness of ∼20 nm. The nanoscale leakage currents are consistent with macroscopic leakage currents from capacitor structures and are correlated with grain characteristics observed by topography maps and transmission electron microscopy as well as with X-ray diffraction.",

keywords = "conductive AFM (CAFM), high-k dielectrics, metal-insulator-metal (MIM) capacitor, RuO, TiO",

author = "Katsuhisa Murakami and Mathias Rommel and Boris Hudec and Alica Rosov{\'a} and Krist{\'i}na Hu{\v s}ekov{\'a} and Edmund Dobro{\v c}ka and Raul Rammula and Aarne Kasikov and Han, \{Jeong Hwan\} and Woongkyu Lee and Song, \{Seul Ji\} and Albena Paskaleva and Bauer, \{Anton J.\} and Lothar Frey and Karol Fr{\"o}hlich and Jaan Aarik and Hwang, \{Cheol Seong\}",

year = "2014",

month = feb,

day = "26",

doi = "10.1021/am4049139",

language = "English",

volume = "6",

pages = "2486--2492",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

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Murakami, K, Rommel, M, Hudec, B, Rosová, A, Hušeková, K, Dobročka, E, Rammula, R, Kasikov, A, Han, JH, Lee, W, Song, SJ, Paskaleva, A, Bauer, AJ, Frey, L, Fröhlich, K, Aarik, J & Hwang, CS 2014, 'Nanoscale characterization of TiO₂ films grown by atomic layer deposition on RuO₂ electrodes', ACS Applied Materials and Interfaces, vol. 6, no. 4, pp. 2486-2492. https://doi.org/10.1021/am4049139

TY - JOUR

T1 - Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes

AU - Murakami, Katsuhisa

AU - Rommel, Mathias

AU - Hudec, Boris

AU - Rosová, Alica

AU - Hušeková, Kristína

AU - Dobročka, Edmund

AU - Rammula, Raul

AU - Kasikov, Aarne

AU - Han, Jeong Hwan

AU - Lee, Woongkyu

AU - Song, Seul Ji

AU - Paskaleva, Albena

AU - Bauer, Anton J.

AU - Frey, Lothar

AU - Fröhlich, Karol

AU - Aarik, Jaan

AU - Hwang, Cheol Seong

PY - 2014/2/26

Y1 - 2014/2/26

N2 - Topography and leakage current maps of TiO2 films grown by atomic layer deposition on RuO2 electrodes using either a TiCl 4 or a Ti(O-i-C3H7)4 precursor were characterized at nanoscale by conductive atomic force microscopy (CAFM). For both films, the leakage current flows mainly through elevated grains and not along grain boundaries. The overall CAFM leakage current is larger and more localized for the TiCl4-based films (0.63 nm capacitance equivalent oxide thickness, CET) compared to the Ti(O-i-C3H7) 4-based films (0.68 nm CET). Both films have a physical thickness of ∼20 nm. The nanoscale leakage currents are consistent with macroscopic leakage currents from capacitor structures and are correlated with grain characteristics observed by topography maps and transmission electron microscopy as well as with X-ray diffraction.

AB - Topography and leakage current maps of TiO2 films grown by atomic layer deposition on RuO2 electrodes using either a TiCl 4 or a Ti(O-i-C3H7)4 precursor were characterized at nanoscale by conductive atomic force microscopy (CAFM). For both films, the leakage current flows mainly through elevated grains and not along grain boundaries. The overall CAFM leakage current is larger and more localized for the TiCl4-based films (0.63 nm capacitance equivalent oxide thickness, CET) compared to the Ti(O-i-C3H7) 4-based films (0.68 nm CET). Both films have a physical thickness of ∼20 nm. The nanoscale leakage currents are consistent with macroscopic leakage currents from capacitor structures and are correlated with grain characteristics observed by topography maps and transmission electron microscopy as well as with X-ray diffraction.

KW - conductive AFM (CAFM)

KW - high-k dielectrics

KW - metal-insulator-metal (MIM) capacitor

KW - RuO

KW - TiO

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U2 - 10.1021/am4049139

DO - 10.1021/am4049139

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AN - SCOPUS:84896815781

SN - 1944-8244

VL - 6

SP - 2486

EP - 2492

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 4

ER -

Nanoscale characterization of TiO₂ films grown by atomic layer deposition on RuO₂ electrodes

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Keywords

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