Negative Capacitance Effect on MOS Structure: Influence of Electric Field Variation

Kitae Lee; Junil Lee; Sihyun Kim; Ryoongbin Lee; Soyoun Kim; Munhyeon Kim; Jong Ho Lee; Sangwan Kim; Byung Gook Park

doi:10.1109/TNANO.2020.2972605

Negative Capacitance Effect on MOS Structure: Influence of Electric Field Variation

Kitae Lee, Junil Lee, Sihyun Kim, Ryoongbin Lee, Soyoun Kim, Munhyeon Kim, Jong Ho Lee, Sangwan Kim, Byung Gook Park

Dept. of Electrical and Information Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We explicate the negative capacitance (NC) effect in MOS structures through TCAD simulation, and find the influence of electric field variation in ferroelectric layer. Furthermore, pre-researched time-dependent NC effect is explained in more detail. For this purpose, the electric field and potential difference in the ferroelectric layer are analyzed based on the measured data of metal-ferroelectric-metal (MFM) capacitors, and then the parameters for the occurrence of the NC effect in the NCFET were analyzed. This establishes the conditions necessary for the successful operation of the NCFET.

Original language	English
Article number	8999808
Pages (from-to)	168-171
Number of pages	4
Journal	IEEE Transactions on Nanotechnology
Volume	19
DOIs	https://doi.org/10.1109/TNANO.2020.2972605
State	Published - 2020

Keywords

ferroelectric
NC effect
NCFET
Negative capacitance (NC)
polarization response time

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10.1109/TNANO.2020.2972605

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title = "Negative Capacitance Effect on MOS Structure: Influence of Electric Field Variation",

abstract = "We explicate the negative capacitance (NC) effect in MOS structures through TCAD simulation, and find the influence of electric field variation in ferroelectric layer. Furthermore, pre-researched time-dependent NC effect is explained in more detail. For this purpose, the electric field and potential difference in the ferroelectric layer are analyzed based on the measured data of metal-ferroelectric-metal (MFM) capacitors, and then the parameters for the occurrence of the NC effect in the NCFET were analyzed. This establishes the conditions necessary for the successful operation of the NCFET.",

keywords = "ferroelectric, NC effect, NCFET, Negative capacitance (NC), polarization response time",

author = "Kitae Lee and Junil Lee and Sihyun Kim and Ryoongbin Lee and Soyoun Kim and Munhyeon Kim and Lee, \{Jong Ho\} and Sangwan Kim and Park, \{Byung Gook\}",

note = "Publisher Copyright: {\textcopyright} 2002-2012 IEEE.",

year = "2020",

doi = "10.1109/TNANO.2020.2972605",

language = "English",

volume = "19",

pages = "168--171",

journal = "IEEE Transactions on Nanotechnology",

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TY - JOUR

T1 - Negative Capacitance Effect on MOS Structure

T2 - Influence of Electric Field Variation

AU - Lee, Kitae

AU - Lee, Junil

AU - Kim, Sihyun

AU - Lee, Ryoongbin

AU - Kim, Soyoun

AU - Kim, Munhyeon

AU - Lee, Jong Ho

AU - Kim, Sangwan

AU - Park, Byung Gook

PY - 2020

Y1 - 2020

N2 - We explicate the negative capacitance (NC) effect in MOS structures through TCAD simulation, and find the influence of electric field variation in ferroelectric layer. Furthermore, pre-researched time-dependent NC effect is explained in more detail. For this purpose, the electric field and potential difference in the ferroelectric layer are analyzed based on the measured data of metal-ferroelectric-metal (MFM) capacitors, and then the parameters for the occurrence of the NC effect in the NCFET were analyzed. This establishes the conditions necessary for the successful operation of the NCFET.

AB - We explicate the negative capacitance (NC) effect in MOS structures through TCAD simulation, and find the influence of electric field variation in ferroelectric layer. Furthermore, pre-researched time-dependent NC effect is explained in more detail. For this purpose, the electric field and potential difference in the ferroelectric layer are analyzed based on the measured data of metal-ferroelectric-metal (MFM) capacitors, and then the parameters for the occurrence of the NC effect in the NCFET were analyzed. This establishes the conditions necessary for the successful operation of the NCFET.

KW - ferroelectric

KW - NC effect

KW - NCFET

KW - Negative capacitance (NC)

KW - polarization response time

UR - https://www.scopus.com/pages/publications/85080142796

U2 - 10.1109/TNANO.2020.2972605

DO - 10.1109/TNANO.2020.2972605

M3 - Article

AN - SCOPUS:85080142796

SN - 1536-125X

VL - 19

SP - 168

EP - 171

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

M1 - 8999808

ER -

Negative Capacitance Effect on MOS Structure: Influence of Electric Field Variation

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Keywords

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