New drive waveforms for high speed erase addressing

Jae Chul Jung; Ohyung Kwon; Ho Jung Syn; Joong Kyun Kim; Ki Woong Whang

doi:10.1889/1.3069510

New drive waveforms for high speed erase addressing

Jae Chul Jung, Ohyung Kwon, Ho Jung Syn, Joong Kyun Kim, Ki Woong Whang

Dept. of Electrical and Information Engineering

Seoul National University

Research output: Contribution to journal › Conference article › peer-review

Abstract

We propose a new high speed driving waveform which uses a negatively biased voltage to the common electrode and an alternating ramp voltage to the scan electrode during the reset period and an erase address scheme. It showed short discharge time lag under 800nsec, wide address voltage margin over 40V and improved jitter characteristics among different color cells in a 7.5inch test panel with 50inch full HD resolution. Its fast discharge characteristics was attributed to the formation of stronger wall voltage near the middle of the gap during the reset period and the consequent bigger electric field during the scan period which was confirmed by the 3 dimensional emission observation and voltage domain analysis.

Original language	English
Pages (from-to)	1746-1749
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	39
Issue number	1
DOIs	https://doi.org/10.1889/1.3069510
State	Published - 2008
Event	2008 SID International Symposium - Los Angeles, CA, United States Duration: 20 May 2008 → 21 May 2008

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title = "New drive waveforms for high speed erase addressing",

abstract = "We propose a new high speed driving waveform which uses a negatively biased voltage to the common electrode and an alternating ramp voltage to the scan electrode during the reset period and an erase address scheme. It showed short discharge time lag under 800nsec, wide address voltage margin over 40V and improved jitter characteristics among different color cells in a 7.5inch test panel with 50inch full HD resolution. Its fast discharge characteristics was attributed to the formation of stronger wall voltage near the middle of the gap during the reset period and the consequent bigger electric field during the scan period which was confirmed by the 3 dimensional emission observation and voltage domain analysis.",

author = "Jung, \{Jae Chul\} and Ohyung Kwon and Syn, \{Ho Jung\} and Kim, \{Joong Kyun\} and Whang, \{Ki Woong\}",

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AU - Jung, Jae Chul

AU - Kwon, Ohyung

AU - Syn, Ho Jung

AU - Kim, Joong Kyun

AU - Whang, Ki Woong

PY - 2008

Y1 - 2008

N2 - We propose a new high speed driving waveform which uses a negatively biased voltage to the common electrode and an alternating ramp voltage to the scan electrode during the reset period and an erase address scheme. It showed short discharge time lag under 800nsec, wide address voltage margin over 40V and improved jitter characteristics among different color cells in a 7.5inch test panel with 50inch full HD resolution. Its fast discharge characteristics was attributed to the formation of stronger wall voltage near the middle of the gap during the reset period and the consequent bigger electric field during the scan period which was confirmed by the 3 dimensional emission observation and voltage domain analysis.

AB - We propose a new high speed driving waveform which uses a negatively biased voltage to the common electrode and an alternating ramp voltage to the scan electrode during the reset period and an erase address scheme. It showed short discharge time lag under 800nsec, wide address voltage margin over 40V and improved jitter characteristics among different color cells in a 7.5inch test panel with 50inch full HD resolution. Its fast discharge characteristics was attributed to the formation of stronger wall voltage near the middle of the gap during the reset period and the consequent bigger electric field during the scan period which was confirmed by the 3 dimensional emission observation and voltage domain analysis.

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U2 - 10.1889/1.3069510

DO - 10.1889/1.3069510

M3 - Conference article

AN - SCOPUS:54549120220

SN - 0097-966X

VL - 39

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JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 2008 SID International Symposium

Y2 - 20 May 2008 through 21 May 2008

ER -

New drive waveforms for high speed erase addressing

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