New materials for memristive switching

Byung Joon Choi; Ning Ge; J. Joshua Yang; Min Xian Zhang; R. Stanley Williams; Kate J. Norris; Nobuhiko P. Kobayashi

doi:10.1109/ISCAS.2014.6865757

New materials for memristive switching

Byung Joon Choi, Ning Ge, J. Joshua Yang, Min Xian Zhang, R. Stanley Williams, Kate J. Norris, Nobuhiko P. Kobayashi

Dept. of Materials Science & Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

Materials play a critical role in memristive devices and the research community is aggressively searching for the most applicable material systems for memristive switching. Two representative examples of newly developed switching materials are presented in this paper, including nitride memristors and Pt doped SiO₂ nanometallic memristors. The former represents nonoxide systems that might be more compatible with nitride electrodes preferred in a fab and the latter represents engineered materials that exhibit a better controllability over the formation of switching channel(s).

Original language	English
Title of host publication	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2808-2811
Number of pages	4
ISBN (Print)	9781479934324
DOIs	https://doi.org/10.1109/ISCAS.2014.6865757
State	Published - 2014
Event	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia Duration: 1 Jun 2014 → 5 Jun 2014

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Country/Territory	Australia
City	Melbourne, VIC
Period	1/06/14 → 5/06/14

Keywords

memory
memristive devices
new switching materials
nitride memristors

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10.1109/ISCAS.2014.6865757

Cite this

Choi, B. J., Ge, N., Yang, J. J., Zhang, M. X., Williams, R. S., Norris, K. J., & Kobayashi, N. P. (2014). New materials for memristive switching. In 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 (pp. 2808-2811). Article 6865757 (Proceedings - IEEE International Symposium on Circuits and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2014.6865757

@inproceedings{f30614cd3d8846a4bbea7ac2a25f4b66,

title = "New materials for memristive switching",

abstract = "Materials play a critical role in memristive devices and the research community is aggressively searching for the most applicable material systems for memristive switching. Two representative examples of newly developed switching materials are presented in this paper, including nitride memristors and Pt doped SiO2 nanometallic memristors. The former represents nonoxide systems that might be more compatible with nitride electrodes preferred in a fab and the latter represents engineered materials that exhibit a better controllability over the formation of switching channel(s).",

keywords = "memory, memristive devices, new switching materials, nitride memristors",

author = "Choi, \{Byung Joon\} and Ning Ge and Yang, \{J. Joshua\} and Zhang, \{Min Xian\} and Williams, \{R. Stanley\} and Norris, \{Kate J.\} and Kobayashi, \{Nobuhiko P.\}",

year = "2014",

doi = "10.1109/ISCAS.2014.6865757",

language = "English",

isbn = "9781479934324",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2808--2811",

booktitle = "2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014",

note = "2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",

}

Choi, BJ, Ge, N, Yang, JJ, Zhang, MX, Williams, RS, Norris, KJ & Kobayashi, NP 2014, New materials for memristive switching. in 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014., 6865757, Proceedings - IEEE International Symposium on Circuits and Systems, Institute of Electrical and Electronics Engineers Inc., pp. 2808-2811, 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014, Melbourne, VIC, Australia, 1/06/14. https://doi.org/10.1109/ISCAS.2014.6865757

New materials for memristive switching. / Choi, Byung Joon; Ge, Ning; Yang, J. Joshua et al.
2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2808-2811 6865757 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Norris, Kate J.

AU - Kobayashi, Nobuhiko P.

PY - 2014

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AB - Materials play a critical role in memristive devices and the research community is aggressively searching for the most applicable material systems for memristive switching. Two representative examples of newly developed switching materials are presented in this paper, including nitride memristors and Pt doped SiO2 nanometallic memristors. The former represents nonoxide systems that might be more compatible with nitride electrodes preferred in a fab and the latter represents engineered materials that exhibit a better controllability over the formation of switching channel(s).

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DO - 10.1109/ISCAS.2014.6865757

M3 - Conference contribution

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T3 - Proceedings - IEEE International Symposium on Circuits and Systems

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BT - 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014

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ER -

New materials for memristive switching

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