TY - JOUR
T1 - Nitride memristors
AU - Choi, Byung Joon
AU - Yang, J. Joshua
AU - Zhang, M. X.
AU - Norris, Kate J.
AU - Ohlberg, Douglas A.A.
AU - Kobayashi, Nobuhiko P.
AU - Medeiros-Ribeiro, Gilberto
AU - Williams, R. Stanley
PY - 2012/10
Y1 - 2012/10
N2 - We demonstrate a promising new material system for ionic resistive switches: nitride memristors. The switching material is an AlN film, deposited using atomic layer deposition (ALD), and the electrodes can be TiN, Pt or Al. A variety of materials characterizations were performed to determine the structure, composition and impurities of the AlN films.
AB - We demonstrate a promising new material system for ionic resistive switches: nitride memristors. The switching material is an AlN film, deposited using atomic layer deposition (ALD), and the electrodes can be TiN, Pt or Al. A variety of materials characterizations were performed to determine the structure, composition and impurities of the AlN films.
UR - https://www.scopus.com/pages/publications/84866680779
U2 - 10.1007/s00339-012-7052-x
DO - 10.1007/s00339-012-7052-x
M3 - Article
AN - SCOPUS:84866680779
SN - 0947-8396
VL - 109
SP - 1
EP - 4
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 1
ER -