Nitride memristors

Byung Joon Choi; J. Joshua Yang; M. X. Zhang; Kate J. Norris; Douglas A.A. Ohlberg; Nobuhiko P. Kobayashi; Gilberto Medeiros-Ribeiro; R. Stanley Williams

doi:10.1007/s00339-012-7052-x

Nitride memristors

Byung Joon Choi
, J. Joshua Yang
, M. X. Zhang
, Kate J. Norris
, Douglas A.A. Ohlberg
, Nobuhiko P. Kobayashi
, Gilberto Medeiros-Ribeiro
, R. Stanley Williams

Dept. of Materials Science & Engineering

Hewlett-Packard
University of California at Santa Cruz

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

We demonstrate a promising new material system for ionic resistive switches: nitride memristors. The switching material is an AlN film, deposited using atomic layer deposition (ALD), and the electrodes can be TiN, Pt or Al. A variety of materials characterizations were performed to determine the structure, composition and impurities of the AlN films.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	109
Issue number	1
DOIs	https://doi.org/10.1007/s00339-012-7052-x
State	Published - Oct 2012

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title = "Nitride memristors",

abstract = "We demonstrate a promising new material system for ionic resistive switches: nitride memristors. The switching material is an AlN film, deposited using atomic layer deposition (ALD), and the electrodes can be TiN, Pt or Al. A variety of materials characterizations were performed to determine the structure, composition and impurities of the AlN films.",

author = "Choi, \{Byung Joon\} and Yang, \{J. Joshua\} and Zhang, \{M. X.\} and Norris, \{Kate J.\} and Ohlberg, \{Douglas A.A.\} and Kobayashi, \{Nobuhiko P.\} and Gilberto Medeiros-Ribeiro and Williams, \{R. Stanley\}",

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AU - Choi, Byung Joon

AU - Yang, J. Joshua

AU - Zhang, M. X.

AU - Norris, Kate J.

AU - Ohlberg, Douglas A.A.

AU - Kobayashi, Nobuhiko P.

AU - Medeiros-Ribeiro, Gilberto

AU - Williams, R. Stanley

PY - 2012/10

Y1 - 2012/10

N2 - We demonstrate a promising new material system for ionic resistive switches: nitride memristors. The switching material is an AlN film, deposited using atomic layer deposition (ALD), and the electrodes can be TiN, Pt or Al. A variety of materials characterizations were performed to determine the structure, composition and impurities of the AlN films.

AB - We demonstrate a promising new material system for ionic resistive switches: nitride memristors. The switching material is an AlN film, deposited using atomic layer deposition (ALD), and the electrodes can be TiN, Pt or Al. A variety of materials characterizations were performed to determine the structure, composition and impurities of the AlN films.

UR - https://www.scopus.com/pages/publications/84866680779

U2 - 10.1007/s00339-012-7052-x

DO - 10.1007/s00339-012-7052-x

M3 - Article

AN - SCOPUS:84866680779

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VL - 109

SP - 1

EP - 4

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 1

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Nitride memristors

Abstract

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