Noise properties of the spin-valve transistor

O. M.J. Van't Erve; P. S. Anil Kumar; R. Jansen; S. D. Kim; R. Vlutters; J. C. Lodder; A. A. Smits; W. J.M. De Jonge

doi:10.1016/S0924-4247(01)00616-1

Noise properties of the spin-valve transistor

O. M.J. Van't Erve, P. S. Anil Kumar, R. Jansen, S. D. Kim, R. Vlutters, J. C. Lodder, A. A. Smits, W. J.M. De Jonge

Dept. of Mechanical System and Design Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Noise measurements have been performed on a spin-valve transistor. This transistor consists of a Pt/NiFe/Au/Co/Au multilayer sandwiched between two semiconductors. For comparison, we also studied metal base transistors with a Pt/Au or Pt/NiFe/Au base. All samples show full shot noise in the collector current. The inclusion of a spin-valve in the base layer decreases the absolute value of the collector current and with it the noise level but it does not change the nature of the noise in this device. Similarly, the collector current, and therefore, the noise changes as a function of magnetic field for the spin-valve transistor, but no additional noise of magnetic origin is observed.

Original language	English
Pages (from-to)	192-195
Number of pages	4
Journal	Sensors and Actuators A: Physical
Volume	91
Issue number	1-2
DOIs	https://doi.org/10.1016/S0924-4247(01)00616-1
State	Published - 5 Jun 2001

Keywords

Hot electron
Metal base transistor
Noise
Schottky barrier
Spin-valve

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10.1016/S0924-4247(01)00616-1

Cite this

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title = "Noise properties of the spin-valve transistor",

abstract = "Noise measurements have been performed on a spin-valve transistor. This transistor consists of a Pt/NiFe/Au/Co/Au multilayer sandwiched between two semiconductors. For comparison, we also studied metal base transistors with a Pt/Au or Pt/NiFe/Au base. All samples show full shot noise in the collector current. The inclusion of a spin-valve in the base layer decreases the absolute value of the collector current and with it the noise level but it does not change the nature of the noise in this device. Similarly, the collector current, and therefore, the noise changes as a function of magnetic field for the spin-valve transistor, but no additional noise of magnetic origin is observed.",

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AU - Van't Erve, O. M.J.

AU - Anil Kumar, P. S.

AU - Jansen, R.

AU - Kim, S. D.

AU - Vlutters, R.

AU - Lodder, J. C.

AU - Smits, A. A.

AU - De Jonge, W. J.M.

PY - 2001/6/5

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AB - Noise measurements have been performed on a spin-valve transistor. This transistor consists of a Pt/NiFe/Au/Co/Au multilayer sandwiched between two semiconductors. For comparison, we also studied metal base transistors with a Pt/Au or Pt/NiFe/Au base. All samples show full shot noise in the collector current. The inclusion of a spin-valve in the base layer decreases the absolute value of the collector current and with it the noise level but it does not change the nature of the noise in this device. Similarly, the collector current, and therefore, the noise changes as a function of magnetic field for the spin-valve transistor, but no additional noise of magnetic origin is observed.

KW - Hot electron

KW - Metal base transistor

KW - Noise

KW - Schottky barrier

KW - Spin-valve

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Noise properties of the spin-valve transistor

Abstract

Keywords

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