Non-volatile memory device using graphene oxide

Seul Ki Hong; Byung Jin Cho

doi:10.1109/INEC.2011.5991806

Non-volatile memory device using graphene oxide

Seul Ki Hong
, Byung Jin Cho

Dept. of Semiconductor Engineering

Korea Advanced Institute of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The resistive switching memory (RRAM) based on graphene oxide (GO) is demonstrated. The Al/GO/ITO structure with 30 nm thick GO shows stable switching properties. In addition, the device exhibits good reliability and flexibility when fabricated on flexible substrate. The detailed mechanism of the switching operation is also studied.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991806
State	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan, Province of China Duration: 21 Jun 2011 → 24 Jun 2011

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Conference

Conference	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan, Province of China
City	Tao-Yuan
Period	21/06/11 → 24/06/11

Keywords

Flexible device
Graphene
RRAM

Access to Document

10.1109/INEC.2011.5991806

Cite this

@inproceedings{f9b95f0149964c20abf5b6fefa497d4a,

title = "Non-volatile memory device using graphene oxide",

abstract = "The resistive switching memory (RRAM) based on graphene oxide (GO) is demonstrated. The Al/GO/ITO structure with 30 nm thick GO shows stable switching properties. In addition, the device exhibits good reliability and flexibility when fabricated on flexible substrate. The detailed mechanism of the switching operation is also studied.",

keywords = "Flexible device, Graphene, RRAM",

author = "Hong, \{Seul Ki\} and Cho, \{Byung Jin\}",

year = "2011",

doi = "10.1109/INEC.2011.5991806",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

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TY - GEN

T1 - Non-volatile memory device using graphene oxide

AU - Hong, Seul Ki

AU - Cho, Byung Jin

PY - 2011

Y1 - 2011

N2 - The resistive switching memory (RRAM) based on graphene oxide (GO) is demonstrated. The Al/GO/ITO structure with 30 nm thick GO shows stable switching properties. In addition, the device exhibits good reliability and flexibility when fabricated on flexible substrate. The detailed mechanism of the switching operation is also studied.

AB - The resistive switching memory (RRAM) based on graphene oxide (GO) is demonstrated. The Al/GO/ITO structure with 30 nm thick GO shows stable switching properties. In addition, the device exhibits good reliability and flexibility when fabricated on flexible substrate. The detailed mechanism of the switching operation is also studied.

KW - Flexible device

KW - Graphene

KW - RRAM

UR - https://www.scopus.com/pages/publications/80053038883

U2 - 10.1109/INEC.2011.5991806

DO - 10.1109/INEC.2011.5991806

M3 - Conference contribution

AN - SCOPUS:80053038883

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

Non-volatile memory device using graphene oxide

Abstract

Publication series

Conference

Keywords

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