Non-volatile memory using graphene oxide for flexible electronics

Seul Ki Hong; Ji Eun Kim; Sang Ouk Kim; Byung Jin Cho

doi:10.1109/NANO.2010.5697794

Non-volatile memory using graphene oxide for flexible electronics

Seul Ki Hong, Ji Eun Kim, Sang Ouk Kim, Byung Jin Cho

Dept. of Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

A non-volatile memory device using graphene oxide (GO) as a resistive switching element is demonstrated. It is found that the electrode materials and GO thickness is critical factors to determine the switching properties of devices. The Al/GO/ITO structure with 30 mn thick GO shows On/Off current ratio of 10³. In addition, the GO memory device exhibits excellent performance when applied to flexible substrate, with good reliability and flexibility.

Original language	English
Title of host publication	2010 10th IEEE Conference on Nanotechnology, NANO 2010
Pages	604-606
Number of pages	3
DOIs	https://doi.org/10.1109/NANO.2010.5697794
State	Published - 2010
Event	2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of Duration: 17 Aug 2010 → 20 Aug 2010

Publication series

Name	2010 10th IEEE Conference on Nanotechnology, NANO 2010

Conference

Conference	2010 10th IEEE Conference on Nanotechnology, NANO 2010
Country/Territory	Korea, Republic of
City	Ilsan, Gyeonggi-Do
Period	17/08/10 → 20/08/10

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10.1109/NANO.2010.5697794

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title = "Non-volatile memory using graphene oxide for flexible electronics",

abstract = "A non-volatile memory device using graphene oxide (GO) as a resistive switching element is demonstrated. It is found that the electrode materials and GO thickness is critical factors to determine the switching properties of devices. The Al/GO/ITO structure with 30 mn thick GO shows On/Off current ratio of 103. In addition, the GO memory device exhibits excellent performance when applied to flexible substrate, with good reliability and flexibility.",

author = "Hong, \{Seul Ki\} and Kim, \{Ji Eun\} and Kim, \{Sang Ouk\} and Cho, \{Byung Jin\}",

year = "2010",

doi = "10.1109/NANO.2010.5697794",

language = "English",

isbn = "9781424470334",

series = "2010 10th IEEE Conference on Nanotechnology, NANO 2010",

pages = "604--606",

booktitle = "2010 10th IEEE Conference on Nanotechnology, NANO 2010",

note = "2010 10th IEEE Conference on Nanotechnology, NANO 2010 ; Conference date: 17-08-2010 Through 20-08-2010",

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Hong, SK, Kim, JE, Kim, SO & Cho, BJ 2010, Non-volatile memory using graphene oxide for flexible electronics. in 2010 10th IEEE Conference on Nanotechnology, NANO 2010., 5697794, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp. 604-606, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, Ilsan, Gyeonggi-Do, Korea, Republic of, 17/08/10. https://doi.org/10.1109/NANO.2010.5697794

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AU - Hong, Seul Ki

AU - Kim, Ji Eun

AU - Kim, Sang Ouk

AU - Cho, Byung Jin

PY - 2010

Y1 - 2010

N2 - A non-volatile memory device using graphene oxide (GO) as a resistive switching element is demonstrated. It is found that the electrode materials and GO thickness is critical factors to determine the switching properties of devices. The Al/GO/ITO structure with 30 mn thick GO shows On/Off current ratio of 103. In addition, the GO memory device exhibits excellent performance when applied to flexible substrate, with good reliability and flexibility.

AB - A non-volatile memory device using graphene oxide (GO) as a resistive switching element is demonstrated. It is found that the electrode materials and GO thickness is critical factors to determine the switching properties of devices. The Al/GO/ITO structure with 30 mn thick GO shows On/Off current ratio of 103. In addition, the GO memory device exhibits excellent performance when applied to flexible substrate, with good reliability and flexibility.

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DO - 10.1109/NANO.2010.5697794

M3 - Conference contribution

AN - SCOPUS:79951833481

SN - 9781424470334

T3 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010

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BT - 2010 10th IEEE Conference on Nanotechnology, NANO 2010

T2 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010

Y2 - 17 August 2010 through 20 August 2010

ER -

Non-volatile memory using graphene oxide for flexible electronics

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