@inproceedings{23f3498ed04b4cd09c67a9d5ff9dd196,
title = "Novel Stacked Floating Fin Structure Gate-All-Around Field-Effect Transistor for Design and Power Optimization",
abstract = "Due to high power density of stacked nanosheet gate-all-around field-effect transistor (GAAFET), device structure should be optimized. In this paper, an optimized nanosheet (NS) transistor based on inverter cell structure to reduce capacitance for low power operation is proposed and analyzed. The impact of the proposed structure on the device characteristic is analyzed through simulated power, performance and area (PPA) analysis. And capacitance variation induced by stacked NS GAAFET is also analyzed.",
keywords = "Gate-all-around FETs, PPA, Variation",
author = "Munhyeon Kim and Kitae Lee and Sihyun Kim and Soyoun Kim and Sangwan Kim and Park, \{Byung Gook\}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731051",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "136--138",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
}