Abstract
Insulated-gate bipolar transistors (IGBTs) are the predominantly used power semiconductors for high-current applications, and are used in trains, airplanes, electrical, and hybrid vehicles. IGBT power modules generate a considerable amount of heat from the dissipation of electric power. This heat generation causes several reliability problems and deteriorates the performances of the IGBT devices. Therefore, thermal management is critical for IGBT modules. In particular, realizing a proper thermal design for which the device temperature does not exceed a specified limit has been a key factor in developing IGBT modules. In this study, we investigate the thermal behavior of the 1200 A, 3.3 kV IGBT module package using finite-element numerical simulation. In order to minimize the temperature of IGBT devices, we analyze the effects of various packaging materials and different thickness values on the thermal characteristics of IGBT modules, and we also perform a design-of-experiment (DOE) optimization.
| Original language | English |
|---|---|
| Pages (from-to) | 1011-1019 |
| Number of pages | 9 |
| Journal | Transactions of the Korean Society of Mechanical Engineers, A |
| Volume | 39 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 2015 |
Keywords
- IGBT Module Package
- Power Device
- Thermal Analysis
- Thermal Design
- Thermal Management
