Optical properties of a Si delta-doped InGaNGaN quantum well with ultraviolet emission

We report on the effect of the position of the Si delta-doped layer within a GaN barrier layer on the optical properties of a InGaNGaN single quantum well (SQW) with an emission wavelength of 374 nm. When the Si delta-doped layer was very close to the SQW layer, the potential well of the Si delta-doped layer overlapped the SQW potential, reducing photoluminescence (PL) intensity. When the Si delta-doped layer was very far away from the SQW layer, carrier injection from the Si delta-doped layer into the SQW layer was not observed. However, the Si delta-doped layer located 12 nm away from the SQW layer showed enhanced PL intensity due to effective electron injection from the Si delta-doped layer into the SQW layer and to an increase in hole confinement in the valence band.