Optimizing Low-Temperature Polymer Thermo Compression Bonding and Polymer Patterning for 3D Multi-Chip Integration

This study presents foundational research results for Cu/polymer hybrid bonding technology, which is essential for the miniaturization, low power consumption, and high-performance semiconductor manufacturing in the AI era. To overcome the limitations of Cu-Cu hybrid bonding using conventional SiO₂ dielectrics, we explored low-temperature polymer thermo-compression bonding (TCB) and patterning methods through dry etching of polymer thin films. High purity pV3D3 thin films were deposited using the iCVD process, followed by FTIR, XPS, and AFM analyses after various surface treatment processes. Additionally, TCB results were presented through SAT and SEM analyses, and a bonding mechanism was proposed, focusing on the chemical structure changes during TCB. Furthermore, we present the polymer dry-etching results for the Cu damascene process in the Cu/polymer hybrid process. Ultimately, the potential for 3D multi-chip integration using Cu/polymer structures is demonstrated, contributing to advancements in 3D chip integration Technology.