Organic Thin-Film Transistors with Transfer-Printed Au Electrodes on Flexible Substrates

Hyunduck Cho; Hyunsik Yoon; Kookheon Char; Yongtaek Hong; Changheech Lee

doi:10.1143/JJAP.49.05EB08

Organic Thin-Film Transistors with Transfer-Printed Au Electrodes on Flexible Substrates

Hyunduck Cho, Hyunsik Yoon, Kookheon Char, Yongtaek Hong, Changheech Lee

Dept. of Chemical and Biomolecular Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Bottom-gate, bottom-contact organic thin-film transistors (OTFTs) based on 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS-pentacene) were fabricated on flexible substrates by transfer-printing and solution-based processes and their performances were characterized. Au gate and source/drain electrodes were transfer-printed from a release-layer-coated flexible mold at 2.4 MPa and 120 ×C in ambient air. A polymer gate dielectric of poly(4-vinyl phenol) (PVP) and an active layer of TIPS-pentacene were deposited by solution processing. In addition, the TFT characteristics in channels of 40 and 4 μm length were compared. Also, the lack of saturation of the drain-source current (IDS) was investigated by considering the output characteristics in a short channel.

Original language	English
Pages (from-to)	05EB081-05EB084
Journal	Japanese Journal of Applied Physics
Volume	49
Issue number	5 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.05EB08
State	Published - May 2010

Access to Document

10.1143/JJAP.49.05EB08

Cite this

@article{7bfddbf94fec470c92a40925079f5633,

title = "Organic Thin-Film Transistors with Transfer-Printed Au Electrodes on Flexible Substrates",

abstract = "Bottom-gate, bottom-contact organic thin-film transistors (OTFTs) based on 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS-pentacene) were fabricated on flexible substrates by transfer-printing and solution-based processes and their performances were characterized. Au gate and source/drain electrodes were transfer-printed from a release-layer-coated flexible mold at 2.4 MPa and 120 ×C in ambient air. A polymer gate dielectric of poly(4-vinyl phenol) (PVP) and an active layer of TIPS-pentacene were deposited by solution processing. In addition, the TFT characteristics in channels of 40 and 4 μm length were compared. Also, the lack of saturation of the drain-source current (IDS) was investigated by considering the output characteristics in a short channel.",

author = "Hyunduck Cho and Hyunsik Yoon and Kookheon Char and Yongtaek Hong and Changheech Lee",

year = "2010",

month = may,

doi = "10.1143/JJAP.49.05EB08",

language = "English",

volume = "49",

pages = "05EB081--05EB084",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "5 PART 2",

}

TY - JOUR

T1 - Organic Thin-Film Transistors with Transfer-Printed Au Electrodes on Flexible Substrates

AU - Cho, Hyunduck

AU - Yoon, Hyunsik

AU - Char, Kookheon

AU - Hong, Yongtaek

AU - Lee, Changheech

PY - 2010/5

Y1 - 2010/5

N2 - Bottom-gate, bottom-contact organic thin-film transistors (OTFTs) based on 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS-pentacene) were fabricated on flexible substrates by transfer-printing and solution-based processes and their performances were characterized. Au gate and source/drain electrodes were transfer-printed from a release-layer-coated flexible mold at 2.4 MPa and 120 ×C in ambient air. A polymer gate dielectric of poly(4-vinyl phenol) (PVP) and an active layer of TIPS-pentacene were deposited by solution processing. In addition, the TFT characteristics in channels of 40 and 4 μm length were compared. Also, the lack of saturation of the drain-source current (IDS) was investigated by considering the output characteristics in a short channel.

AB - Bottom-gate, bottom-contact organic thin-film transistors (OTFTs) based on 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS-pentacene) were fabricated on flexible substrates by transfer-printing and solution-based processes and their performances were characterized. Au gate and source/drain electrodes were transfer-printed from a release-layer-coated flexible mold at 2.4 MPa and 120 ×C in ambient air. A polymer gate dielectric of poly(4-vinyl phenol) (PVP) and an active layer of TIPS-pentacene were deposited by solution processing. In addition, the TFT characteristics in channels of 40 and 4 μm length were compared. Also, the lack of saturation of the drain-source current (IDS) was investigated by considering the output characteristics in a short channel.

UR - http://www.scopus.com/inward/record.url?scp=77952983938&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.05EB08

DO - 10.1143/JJAP.49.05EB08

M3 - Article

AN - SCOPUS:77952983938

SN - 0021-4922

VL - 49

SP - 05EB081-05EB084

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 5 PART 2

ER -

Organic Thin-Film Transistors with Transfer-Printed Au Electrodes on Flexible Substrates

Abstract

Access to Document

Other files and links

Fingerprint

Cite this