Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations

Jong Kyung Park; Dong Il Moon; Yang Kyu Choi; Seok Hee Lee; Ki Hong Lee; Seung Ho Pyi; Byung Jin Cho

doi:10.1109/IEDM.2012.6478964

Origin of transient V_th shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations

Jong Kyung Park, Dong Il Moon, Yang Kyu Choi, Seok Hee Lee, Ki Hong Lee, Seung Ho Pyi, Byung Jin Cho

Dept. of Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

The mechanism of transient V_th shift after erase is studied in detail. It is concluded that the main mechanism is hole redistribution in the charge trap layer. A new erase scheme is proposed and demonstrated to reduce transient V_th shift. The impact of transient V_th shift on the 3D charge trap device is investigated, as well.

Original language	English
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	2.4.1-2.4.4
DOIs	https://doi.org/10.1109/IEDM.2012.6478964
State	Published - 2012
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: 10 Dec 2012 → 13 Dec 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	10/12/12 → 13/12/12

Access to Document

10.1109/IEDM.2012.6478964

Cite this

Park, J. K., Moon, D. I., Choi, Y. K., Lee, S. H., Lee, K. H., Pyi, S. H., & Cho, B. J. (2012). Origin of transient V_th shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 2.4.1-2.4.4). Article 6478964 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6478964

@inproceedings{d9d09e59fa504301bb05223cf8d4a337,

title = "Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations",

abstract = "The mechanism of transient Vth shift after erase is studied in detail. It is concluded that the main mechanism is hole redistribution in the charge trap layer. A new erase scheme is proposed and demonstrated to reduce transient Vth shift. The impact of transient Vth shift on the 3D charge trap device is investigated, as well.",

author = "Park, \{Jong Kyung\} and Moon, \{Dong Il\} and Choi, \{Yang Kyu\} and Lee, \{Seok Hee\} and Lee, \{Ki Hong\} and Pyi, \{Seung Ho\} and Cho, \{Byung Jin\}",

year = "2012",

doi = "10.1109/IEDM.2012.6478964",

language = "English",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "2.4.1--2.4.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

}

Park, JK, Moon, DI, Choi, YK, Lee, SH, Lee, KH, Pyi, SH & Cho, BJ 2012, Origin of transient V_th shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6478964, Technical Digest - International Electron Devices Meeting, IEDM, pp. 2.4.1-2.4.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 10/12/12. https://doi.org/10.1109/IEDM.2012.6478964

Origin of transient V_th shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations. / Park, Jong Kyung; Moon, Dong Il; Choi, Yang Kyu et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 2.4.1-2.4.4 6478964 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The mechanism of transient Vth shift after erase is studied in detail. It is concluded that the main mechanism is hole redistribution in the charge trap layer. A new erase scheme is proposed and demonstrated to reduce transient Vth shift. The impact of transient Vth shift on the 3D charge trap device is investigated, as well.

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