Oxide based memristive devices

J. Joshua Yang; M. X. Zhang; Feng Miao; John Paul Strachan; Antonio C. Torrezan; Matthew D. Pickett; Wei Yi; Byung Joon Choi; Janice H. Nickel; Gilberto Medeiros-Ribeiro; R. Stanley Williams

doi:10.1109/ICSICT.2012.6467661

Oxide based memristive devices

J. Joshua Yang, M. X. Zhang, Feng Miao, John Paul Strachan, Antonio C. Torrezan, Matthew D. Pickett, Wei Yi, Byung Joon Choi, Janice H. Nickel, Gilberto Medeiros-Ribeiro, R. Stanley Williams

Dept. of Materials Science & Engineering

Hewlett-Packard

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Memristive devices with fast speed, low-energy, high endurance and small footprint have attracted significant attention recently. In this article, we first briefly introduce the switching mechanisms and then discuss possible applications with these devices, including memory, logic and neuromorphic computing. Finally, the promises and challenges of these devices are discussed, together with some possible solutions.

Original language	English
Title of host publication	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs	https://doi.org/10.1109/ICSICT.2012.6467661
State	Published - 2012
Event	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: 29 Oct 2012 → 1 Nov 2012

Publication series

Name	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Country/Territory	China
City	Xi'an
Period	29/10/12 → 1/11/12

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10.1109/ICSICT.2012.6467661

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Yang, J. J., Zhang, M. X., Miao, F., Strachan, J. P., Torrezan, A. C., Pickett, M. D., Yi, W., Choi, B. J., Nickel, J. H., Medeiros-Ribeiro, G., & Williams, R. S. (2012). Oxide based memristive devices. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings Article 6467661 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6467661

@inproceedings{cba8e98783e042b9833b008440108b66,

title = "Oxide based memristive devices",

abstract = "Memristive devices with fast speed, low-energy, high endurance and small footprint have attracted significant attention recently. In this article, we first briefly introduce the switching mechanisms and then discuss possible applications with these devices, including memory, logic and neuromorphic computing. Finally, the promises and challenges of these devices are discussed, together with some possible solutions.",

author = "Yang, \{J. Joshua\} and Zhang, \{M. X.\} and Feng Miao and Strachan, \{John Paul\} and Torrezan, \{Antonio C.\} and Pickett, \{Matthew D.\} and Wei Yi and Choi, \{Byung Joon\} and Nickel, \{Janice H.\} and Gilberto Medeiros-Ribeiro and Williams, \{R. Stanley\}",

year = "2012",

doi = "10.1109/ICSICT.2012.6467661",

language = "English",

isbn = "9781467324724",

series = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",

}

Yang, JJ, Zhang, MX, Miao, F, Strachan, JP, Torrezan, AC, Pickett, MD, Yi, W, Choi, BJ, Nickel, JH, Medeiros-Ribeiro, G & Williams, RS 2012, Oxide based memristive devices. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467661, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6467661

Oxide based memristive devices. / Yang, J. Joshua; Zhang, M. X.; Miao, Feng et al.
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467661 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Oxide based memristive devices

AU - Yang, J. Joshua

AU - Zhang, M. X.

AU - Miao, Feng

AU - Strachan, John Paul

AU - Torrezan, Antonio C.

AU - Pickett, Matthew D.

AU - Yi, Wei

AU - Choi, Byung Joon

AU - Nickel, Janice H.

AU - Medeiros-Ribeiro, Gilberto

AU - Williams, R. Stanley

PY - 2012

Y1 - 2012

N2 - Memristive devices with fast speed, low-energy, high endurance and small footprint have attracted significant attention recently. In this article, we first briefly introduce the switching mechanisms and then discuss possible applications with these devices, including memory, logic and neuromorphic computing. Finally, the promises and challenges of these devices are discussed, together with some possible solutions.

AB - Memristive devices with fast speed, low-energy, high endurance and small footprint have attracted significant attention recently. In this article, we first briefly introduce the switching mechanisms and then discuss possible applications with these devices, including memory, logic and neuromorphic computing. Finally, the promises and challenges of these devices are discussed, together with some possible solutions.

UR - https://www.scopus.com/pages/publications/84874867862

U2 - 10.1109/ICSICT.2012.6467661

DO - 10.1109/ICSICT.2012.6467661

M3 - Conference contribution

AN - SCOPUS:84874867862

SN - 9781467324724

T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

Y2 - 29 October 2012 through 1 November 2012

ER -

Yang JJ, Zhang MX, Miao F, Strachan JP, Torrezan AC, Pickett MD et al. Oxide based memristive devices. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467661. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2012.6467661

Oxide based memristive devices

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