Pattern density effect on interfacial bonding characteristics of Cu-Cu direct bonds for 3D IC packages

J. M. Park, J. B. Kim, J. W. Kim, Y. R. Kim, S. E. Kim, Y. B. Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this study, effect interfacial bonding strength on pattern density was evaluated. The Silicon oxide(SiO2) on parallel patterned Cu lines wafer can be removed by using a solution of buffered oxide etch and sulfuric acid (BOE/H2SO4) to improve the bonding quality of Cu-Cu pattern direct bonds. Two 8-inch Cu wafers were bonded at 400°C via the thermocompression method. The interfacial adhesion energy of Cu-Cu pattern direct bonding was quantitatively measured by the four-point bending method. After BOE for 2 min/H2SO4 for 1 min wet pretreatment, the interfacial adhesion energies with pattern density of 0.06, and 0.23 were 7.9, and 4.1 J/m2, respectively. Therefore, the CMP planarization is critical to have reliable bonding quality of Cu pattern direct bonds.

Original languageEnglish
Title of host publicationProceedings of the 2012 IEEE 14th Electronics Packaging Technology Conference, EPTC 2012
Pages185-188
Number of pages4
DOIs
StatePublished - 2012
Event2012 IEEE 14th Electronics Packaging Technology Conference, EPTC 2012 - Singapore, Singapore
Duration: 5 Dec 20127 Dec 2012

Publication series

NameProceedings of the 2012 IEEE 14th Electronics Packaging Technology Conference, EPTC 2012

Conference

Conference2012 IEEE 14th Electronics Packaging Technology Conference, EPTC 2012
Country/TerritorySingapore
CitySingapore
Period5/12/127/12/12

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