Phase change memory cell using Ge2Sb2 Te5 and softly broken-down TiO2 films for multilevel operation

Byung Joon Choi; Seol Choi; Taeyong Eom; Sang Ho Rha; Kyung Min Kim; Cheol Seong Hwang

doi:10.1063/1.3494084

Phase change memory cell using Ge₂Sb₂ Te₅ and softly broken-down TiO₂ films for multilevel operation

Byung Joon Choi, Seol Choi, Taeyong Eom, Sang Ho Rha, Kyung Min Kim, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A phase change memory cell was fabricated by stacking plasma-enhanced cyclic chemical-vapor-deposited Ge₂Sb₂Te₅ (GST) and atomic layer deposited TiO₂ thin films. Different pairs of resistance states were obtained by controlling the current flow, which can be used to achieve higher memory density by multilevel operation. The multiresistance states of the stacked cell were explained by the resistance switching phenomena of TiO₂ and the thermoelectric phase change properties of GST. The phase change characteristics of GST could be altered by controlling the degree of filament formation in the TiO₂ layer, which eventually changed the phase change volume in the GST.

Original language	English
Article number	132107
Journal	Applied Physics Letters
Volume	97
Issue number	13
DOIs	https://doi.org/10.1063/1.3494084
State	Published - 27 Sep 2010

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title = "Phase change memory cell using Ge2Sb2 Te5 and softly broken-down TiO2 films for multilevel operation",

abstract = "A phase change memory cell was fabricated by stacking plasma-enhanced cyclic chemical-vapor-deposited Ge2Sb2Te5 (GST) and atomic layer deposited TiO2 thin films. Different pairs of resistance states were obtained by controlling the current flow, which can be used to achieve higher memory density by multilevel operation. The multiresistance states of the stacked cell were explained by the resistance switching phenomena of TiO2 and the thermoelectric phase change properties of GST. The phase change characteristics of GST could be altered by controlling the degree of filament formation in the TiO2 layer, which eventually changed the phase change volume in the GST.",

author = "Choi, {Byung Joon} and Seol Choi and Taeyong Eom and Rha, {Sang Ho} and Kim, {Kyung Min} and Hwang, {Cheol Seong}",

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T1 - Phase change memory cell using Ge2Sb2 Te5 and softly broken-down TiO2 films for multilevel operation

AU - Choi, Byung Joon

AU - Choi, Seol

AU - Eom, Taeyong

AU - Rha, Sang Ho

AU - Kim, Kyung Min

AU - Hwang, Cheol Seong

PY - 2010/9/27

Y1 - 2010/9/27

N2 - A phase change memory cell was fabricated by stacking plasma-enhanced cyclic chemical-vapor-deposited Ge2Sb2Te5 (GST) and atomic layer deposited TiO2 thin films. Different pairs of resistance states were obtained by controlling the current flow, which can be used to achieve higher memory density by multilevel operation. The multiresistance states of the stacked cell were explained by the resistance switching phenomena of TiO2 and the thermoelectric phase change properties of GST. The phase change characteristics of GST could be altered by controlling the degree of filament formation in the TiO2 layer, which eventually changed the phase change volume in the GST.

AB - A phase change memory cell was fabricated by stacking plasma-enhanced cyclic chemical-vapor-deposited Ge2Sb2Te5 (GST) and atomic layer deposited TiO2 thin films. Different pairs of resistance states were obtained by controlling the current flow, which can be used to achieve higher memory density by multilevel operation. The multiresistance states of the stacked cell were explained by the resistance switching phenomena of TiO2 and the thermoelectric phase change properties of GST. The phase change characteristics of GST could be altered by controlling the degree of filament formation in the TiO2 layer, which eventually changed the phase change volume in the GST.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132107

ER -

Phase change memory cell using Ge₂Sb₂ Te₅ and softly broken-down TiO₂ films for multilevel operation

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