Phase transformation behaviors of Si O2 doped Ge2 Sb2 Te5 films for application in phase change random access memory

Seung Wook Ryu; Jin Ho Oh; Jong Ho Lee; Byung Joon Choi; Won Kim; Suk Kyoung Hong; Cheol Seong Hwang; Hyeong Joon Kim

doi:10.1063/1.2898719

Phase transformation behaviors of Si O2 doped Ge2 Sb2 Te5 films for application in phase change random access memory

Seung Wook Ryu, Jin Ho Oh, Jong Ho Lee, Byung Joon Choi, Won Kim, Suk Kyoung Hong, Cheol Seong Hwang, Hyeong Joon Kim

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

The improvement in the phase change characteristics of Ge2 Sb2 Te5 (GST) films for phase change random access memory applications was investigated by doping the GST films with Si O2 using cosputtering at room temperature. As the sputtering power of Si O2 increased from 0 to 150 W, the activation energy for crystallization increased from 2.1±0.2 to 3.1±0.15 eV. Si O2 inhibited the crystallization of the amorphous GST films, which improved the long term stability of the metastable amorphous phase. The melting point decreased with increasing concentration of Si O2, which reduced the power consumption as well as the reset current.

Original language	English
Article number	142110
Journal	Applied Physics Letters
Volume	92
Issue number	14
DOIs	https://doi.org/10.1063/1.2898719
State	Published - 2008

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@article{1514c0d635444bd4bcd577ec82b6e580,

title = "Phase transformation behaviors of Si O2 doped Ge2 Sb2 Te5 films for application in phase change random access memory",

abstract = "The improvement in the phase change characteristics of Ge2 Sb2 Te5 (GST) films for phase change random access memory applications was investigated by doping the GST films with Si O2 using cosputtering at room temperature. As the sputtering power of Si O2 increased from 0 to 150 W, the activation energy for crystallization increased from 2.1±0.2 to 3.1±0.15 eV. Si O2 inhibited the crystallization of the amorphous GST films, which improved the long term stability of the metastable amorphous phase. The melting point decreased with increasing concentration of Si O2, which reduced the power consumption as well as the reset current.",

author = "Ryu, \{Seung Wook\} and Oh, \{Jin Ho\} and Lee, \{Jong Ho\} and Choi, \{Byung Joon\} and Won Kim and Hong, \{Suk Kyoung\} and Hwang, \{Cheol Seong\} and Kim, \{Hyeong Joon\}",

year = "2008",

doi = "10.1063/1.2898719",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

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T1 - Phase transformation behaviors of Si O2 doped Ge2 Sb2 Te5 films for application in phase change random access memory

AU - Ryu, Seung Wook

AU - Oh, Jin Ho

AU - Lee, Jong Ho

AU - Choi, Byung Joon

AU - Kim, Won

AU - Hong, Suk Kyoung

AU - Hwang, Cheol Seong

AU - Kim, Hyeong Joon

PY - 2008

Y1 - 2008

N2 - The improvement in the phase change characteristics of Ge2 Sb2 Te5 (GST) films for phase change random access memory applications was investigated by doping the GST films with Si O2 using cosputtering at room temperature. As the sputtering power of Si O2 increased from 0 to 150 W, the activation energy for crystallization increased from 2.1±0.2 to 3.1±0.15 eV. Si O2 inhibited the crystallization of the amorphous GST films, which improved the long term stability of the metastable amorphous phase. The melting point decreased with increasing concentration of Si O2, which reduced the power consumption as well as the reset current.

AB - The improvement in the phase change characteristics of Ge2 Sb2 Te5 (GST) films for phase change random access memory applications was investigated by doping the GST films with Si O2 using cosputtering at room temperature. As the sputtering power of Si O2 increased from 0 to 150 W, the activation energy for crystallization increased from 2.1±0.2 to 3.1±0.15 eV. Si O2 inhibited the crystallization of the amorphous GST films, which improved the long term stability of the metastable amorphous phase. The melting point decreased with increasing concentration of Si O2, which reduced the power consumption as well as the reset current.

UR - https://www.scopus.com/pages/publications/42149162916

U2 - 10.1063/1.2898719

DO - 10.1063/1.2898719

M3 - Article

AN - SCOPUS:42149162916

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142110

ER -

Phase transformation behaviors of Si O2 doped Ge2 Sb2 Te5 films for application in phase change random access memory

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