Phosphor-free white light-emitting diode using InGaN/GaN multiple quantum wells grown on microfacets

Chu Young Cho, Il Kyu Park, Min Ki Kwon, Ja Yeon Kim, Seong Ju Park, Dong Ryul Jung, Kwang Woo Kwon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We demonstrate phosphor-free light-emitting diode (LED) by growing InGaN/GaN multiple quantum wells (MQWs) on the n-GaN microfacets. The white emission was realized by combining emissions from InGaN/GaN MQWs grown on cplane (0001), semipolar {11-22} and {1-101} facets which are selectively grown on n-GaN with trapezoidal shape arrays. The photoluminescence (PL) and electroluminescence (EL) measurement revealed that the long wavelength light was emitted from InGaN/GaN MQWs grown on c-plane (0001), while the short wavelength light was emitted from that of semipolar microfacets. The change in the emission wavelengths from each microfacets was due to the difference in the well thickness and In composition of each MQWs. The LED showed white emission at an injection current between 180 and 230 mA. These results suggested that white emission is possible without using the phosphor by combining emission lights emitted from microfacets.

Original languageEnglish
Title of host publicationEighth International Conference on Solid State Lighting
DOIs
StatePublished - 2008
EventThe International Society for Optical Engineering (SPIE) - San Diego, CA, United States
Duration: 11 Aug 200813 Aug 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7058
ISSN (Print)0277-786X

Conference

ConferenceThe International Society for Optical Engineering (SPIE)
Country/TerritoryUnited States
CitySan Diego, CA
Period11/08/0813/08/08

Keywords

  • c-plane (0001)
  • Electroluminescence (EL)
  • GaN
  • Microfacet
  • Semipolar {1-101}
  • White LED
  • {11-22}

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