Piezoresistive sensing performance of junctionless nanowire FET

Pushpapraj Singh; Jianmin Miao; Vincent Pott; Woo Tae Park; Dim Lee Kwong

doi:10.1109/LED.2012.2217112

Piezoresistive sensing performance of junctionless nanowire FET

Pushpapraj Singh, Jianmin Miao, Vincent Pott, Woo Tae Park, Dim Lee Kwong

Dept. of Mechanical & Automotive Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

This letter investigates junctionless nanowire field-effect transistor (NWFET) (JL-NWFET) parameters such as piezoresistance and low-frequency noise (LFN) with respect to channel doping and gate bias. The JL-NWFET is piezoresistive, and its gauge factor (GF ) is increased from 24 to 47 by reducing the channel doping ten times from 6.7 × 10¹⁹ to 6.7 × 10¹⁸ cm^-3. Significant variations of GF and LFN are observed when the JL-NWFET is operated from subthreshold to on-state regime, and resolution (minimum detectable strain) is improved four times compared to inversion-mode NWFET. The simple fabrication and superior resolution formulate JL-NWFET as a promising sensing element for miniaturized nanoelectromechanical sensors.

Original language	English
Article number	6329399
Pages (from-to)	1759-1761
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	12
DOIs	https://doi.org/10.1109/LED.2012.2217112
State	Published - 2012

Keywords

Junctionless field-effect transistor (JLFET)
piezoresistivity
sensor resolution
strained silicon

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10.1109/LED.2012.2217112

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title = "Piezoresistive sensing performance of junctionless nanowire FET",

abstract = "This letter investigates junctionless nanowire field-effect transistor (NWFET) (JL-NWFET) parameters such as piezoresistance and low-frequency noise (LFN) with respect to channel doping and gate bias. The JL-NWFET is piezoresistive, and its gauge factor (GF ) is increased from 24 to 47 by reducing the channel doping ten times from 6.7 × 1019 to 6.7 × 1018 cm-3. Significant variations of GF and LFN are observed when the JL-NWFET is operated from subthreshold to on-state regime, and resolution (minimum detectable strain) is improved four times compared to inversion-mode NWFET. The simple fabrication and superior resolution formulate JL-NWFET as a promising sensing element for miniaturized nanoelectromechanical sensors.",

keywords = "Junctionless field-effect transistor (JLFET), piezoresistivity, sensor resolution, strained silicon",

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AU - Singh, Pushpapraj

AU - Miao, Jianmin

AU - Pott, Vincent

AU - Park, Woo Tae

AU - Kwong, Dim Lee

PY - 2012

Y1 - 2012

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AB - This letter investigates junctionless nanowire field-effect transistor (NWFET) (JL-NWFET) parameters such as piezoresistance and low-frequency noise (LFN) with respect to channel doping and gate bias. The JL-NWFET is piezoresistive, and its gauge factor (GF ) is increased from 24 to 47 by reducing the channel doping ten times from 6.7 × 1019 to 6.7 × 1018 cm-3. Significant variations of GF and LFN are observed when the JL-NWFET is operated from subthreshold to on-state regime, and resolution (minimum detectable strain) is improved four times compared to inversion-mode NWFET. The simple fabrication and superior resolution formulate JL-NWFET as a promising sensing element for miniaturized nanoelectromechanical sensors.

KW - Junctionless field-effect transistor (JLFET)

KW - piezoresistivity

KW - sensor resolution

KW - strained silicon

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JF - IEEE Electron Device Letters

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Piezoresistive sensing performance of junctionless nanowire FET

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